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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| LQE, ED, CPM | 2023-11-30 13:55 |
Shizuoka | Effects of surface treatments after gate recess etching on AlGaN/GaN MIS-HFETs with insulators formed by ALD Toshiharu Kubo, Takashi Egawa (Nagoya Inst. of Technol.)  ED2023-16 CPM2023-58 LQE2023-56 |
Degradation of electrical characteristics due to etching damage during formation of recess structure has been an issue f... [more] | ED2023-16 CPM2023-58 LQE2023-56 pp.11-14 |
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| LQE, CPM, ED | 2020-11-26 13:50 |
Online | Online | Estimation of electrical properties of AlGaN/GaN MIS-HEMTs with SiO2/Al2O3 double insulators fabricated by ALD Shunichi Yokoi, Toshiharu Kubo, Takashi Egawa (Nagoya Inst. of Tech.) ED2020-8 CPM2020-29 LQE2020-59 |
Since SiO2 has a large band gap of approximately 9 eV, the interface characteristics of the interface and gate leakage c... [more] | ED2020-8 CPM2020-29 LQE2020-59 pp.29-32 |
| LQE, CPM, ED | 2020-11-26 15:50 |
Online | Online | GaN-based MIS-HEMTs with Mist Chemical Vapor Deposited Al2O3 Low Rui Shan, Itsuki Nagase, Ali Baratov, Joel Tacla Asubar, Hirokuni Tokuda (Univ. of Fukui), Masaaki Kuzuhara (Kwansei Gakuin Univ.), Zenji Yatabe, Kenta Naito, Motoyama Tomohiro, Yusui Nakamura (Kumamoto Univ.) ED2020-13 CPM2020-34 LQE2020-64 |
We have fabricated AlGaN/GaN metal-insulator-semiconductor high-electron mobility transistors (MIS-HEMTs) using Al2O3 ga... [more] | ED2020-13 CPM2020-34 LQE2020-64 pp.49-52 |
| CPM, LQE, ED | 2019-11-21 13:55 |
Shizuoka | Shizuoka Univ. (Hamamatsu) | Estimation of device characteristics of AlGaN/GaN MIS-HEMTs with SiO2/Al2O3 double insulators fabricated by ALD Shunichi Yokoi, Keita Furuoka, Toshiharu Kubo, Takashi Egawa (Nagoya Inst. of Tech.) ED2019-41 CPM2019-60 LQE2019-84 |
SiO2 has a relatively large band gap of approximately 9 eV. Therefore, by fabricating SiO2/Al2O3 double insulators, GaN-... [more] | ED2019-41 CPM2019-60 LQE2019-84 pp.37-40 |
| LQE, CPM, ED | 2017-12-01 13:45 |
Aichi | Nagoya Inst. tech. | Estimation of effects of layer thickness and annealing on chemical states of ALD-Al2O3 layers on AlGaN by using XPS and ESR Toshiharu Kubo, Makoto Miyoshi, Takashi Egawa (Nagoya Inst. of Tech.) ED2017-64 CPM2017-107 LQE2017-77 |
As the insulator for MIS structures in GaN-based power devices, Al2O3 fabricated by ALD has often been used. The post-de... [more] | ED2017-64 CPM2017-107 LQE2017-77 pp.73-76 |
| SDM | 2016-10-27 10:00 |
Miyagi | Niche, Tohoku Univ. | Effects of the oxidizing species on the interface of Al2O3 film by atomic layer deposition Masaya Saito, Tomoyuki Suwa, Akinobu Teramoto, Rihito Kuroda, Yasumasa Koda, Hisaya Sugita, Hidekazu Ishii, Yoshinobu Shiba, Yasuyuki Shirai, Shigetoshi Sugawa (Tohoku univ.), Marie Hayashi, Junichi Tsuchimoto (CANON ANELVA) SDM2016-73 |
Al2O3 is a prospective high-dielectric material for the gate insulator film of the power devices and MIM (Metal-Insulato... [more] | SDM2016-73 pp.27-30 |
| SDM | 2015-06-19 15:15 |
Aichi | VBL, Nagoya Univ. | Electrical properties of GIZO TFT with ultrathin Al2O3 insulators by PE-ALD method Kazunori Kurishima (Meiji Univ./NIMS), Toshihide Nabatame, Kazuhito Tsukagoshi, Akihiko Ohi, Toyohiro Chikyow (NIMS), Atsushi Ogura (Meiji Univ.) SDM2015-51 |
To investigate the influence of an Al2O3 layer on the electrical properties of Ga-In-Zn-O (GIZO) thin-film transistors (... [more] | SDM2015-51 pp.69-73 |
| SDM | 2015-06-19 16:10 |
Aichi | VBL, Nagoya Univ. | Improvements of electrical properties of wafer-bonded GeOI substrates with ultrathin Al2O3/SiO2 hybrid BOX layers by post-annealing Keisuke Yoshida, Shotaro Takeuchi, Yoshiaki Nakamura, Akira Sakai (Osaka Univ.) SDM2015-53 |
The electrical properties of wafer-bonded germanium (001)-on-insulator (Ge (001)-OI) substrates with Al2O3/SiO2 hybrid b... [more] | SDM2015-53 pp.81-86 |
| ED, CPM, SDM | 2015-05-28 17:05 |
Aichi | Venture Business Laboratory, Toyohashi University of Technology | Device simulation of NO2-exposed H-terminated diamond FETs with Al2O3 insulator Toshiyuki Oishi, Ryutaro Higashi, Kazuya Harada, Yuta Koga (Saga Univ.), Kazuyuki Hirama (NTT), Makoto Kasu (Saga Univ.) ED2015-24 CPM2015-9 SDM2015-26 |
This paper investigated the simulation model for NO2-exposed H-terminated diamond FETs with Al2O3 insulator gate, which ... [more] | ED2015-24 CPM2015-9 SDM2015-26 pp.41-44 |
| CPM, LQE, ED | 2013-11-29 15:50 |
Osaka | Interface properties of n-GaN MIS diodes with laminated ZrO2/Al2O3 films as a gate insulator Shintaro Kodama, Hirokuni Tokuda, Masaaki Kuzuhara (Univ. of Fukui) ED2013-87 CPM2013-146 LQE2013-122 |
Capacitance-voltage and current-voltage characteristics have been investigated for n-GaN MIS diodes. ZrO2/Al2O3 laminate... [more] | ED2013-87 CPM2013-146 LQE2013-122 pp.107-112 |
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| SDM | 2012-06-21 10:55 |
Aichi | VBL, Nagoya Univ. | Clarification of Interfacial Reaction Mechanism in O2 Annealing or O radical Process for Al2O3/Ge Structure Shigehisa Shibayama, Kimihiko Kato, Mitsuo Sakashita, Wakana Takeuchi, Noriyuki Taoka, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) SDM2012-48 |
To realize a high performance Ge MOSFET, it is quite important to achieve simultaneously the low interface state density... [more] | SDM2012-48 pp.27-32 |
| ED | 2009-06-11 16:25 |
Tokyo | Improvement in Device Performance in MIS AlGaN/GaN HFETs by Designing Insulator/AlGaN/GaN Structures Narihiko Maeda, Masanobu Hiroki, Takatomo Enoki (NTT), Takashi Kobayashi (NTT AT) ED2009-42 |
To improve the device performance of GaN-based Metal-Insulator-Semiconductor (MIS) heterostructure field-effect transist... [more] | ED2009-42 pp.31-36 |
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| SDM, R, ED | 2007-11-16 13:00 |
Osaka | Electrical Characterization of Yttriumaluminate(YAlO)Film Keiko Matsunouchi, Naoyoshi Komatsu, Chiharu Kimura, Hidemitsu Aoki, Takashi Sugino (Osaka Univ.) R2007-46 ED2007-179 SDM2007-214 |
To achieve high power FET using wide bandgap semiconductor, a gate insulator film with a wide bandgap and a high dielect... [more] | R2007-46 ED2007-179 SDM2007-214 pp.1-6 |
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| CPM | 2007-11-16 17:00 |
Niigata | Nagaoka University of Technology | Crystal Growth of Cr2O3 Sputtered Films on Sapphire Substrates and platinum electrode Shummpei Otsuki, Takeshi Asada, Nobuyuki Iwata, Hiroshi Yamamoto (Nihon Univ) CPM2007-113 |
The Cr2O3 thin films were grown on sapphire substrate and Pt film to apply magnetoelectric oxides to oxides electronics.... [more] | CPM2007-113 pp.43-48 |
| CPM, ED, LQE | 2007-10-11 17:35 |
Fukui | Fukui Univ. | UV-response characteristics of insulator/n-GaN MIS structures for sensor application Chihoko Mizue, Tetsuya Matsuyama, Junji Kotani, Marcin Miczek, Tamotsu Hashizume (Hokkaido Univ.) ED2007-164 CPM2007-90 LQE2007-65 |
For UV-detector application, n-GaN Metal-Insulator-Semiconductor(MIS) structure was fabricated using AlOx, layer which w... [more] | ED2007-164 CPM2007-90 LQE2007-65 pp.43-46 |
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