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All Technical Committee Conferences (Searched in: All Years)
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Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
LQE, ED, CPM |
2023-11-30 14:20 |
Shizuoka |
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Steam Oxidation Technique for Defect Reduction on ALD-Al2O3 Insulated-gate structures Shiro Ozaki, Yusuke Kumazaki, Naoya Okamoto, Yasuhiro Nakasya, Toshihiro Tagi, Naoki Hara (Fujitsu) ED2023-17 CPM2023-59 LQE2023-57 |
In this study, we investigated the effect of oxidant sources on carbon-related impurities in atomic layer deposited (ALD... [more] |
ED2023-17 CPM2023-59 LQE2023-57 pp.15-20 |
CPM, LQE, ED |
2016-12-12 15:45 |
Kyoto |
Kyoto University |
Normally-off operation of planar GaN MOS-HFET Takuma Nanjo, Tetsuro Hayashida, Hidetoshi Koyama, Akifumi Imai, Akihiko Furukawa, Mikio Yamamuka (Mitsubishi Electric) ED2016-63 CPM2016-96 LQE2016-79 |
Normally-off operation with high drain current density was firstly demonstrated in simple planar type GaN MOS-HFET with ... [more] |
ED2016-63 CPM2016-96 LQE2016-79 pp.31-34 |
ED, LQE, CPM |
2012-11-29 15:50 |
Osaka |
Osaka City University |
Reduction in Threshold Voltage Shift of Insulated-gate GaN-HEMT Using ALD-Al2O3 Films Shiro Ozaki, Toshihiro Ohki, Masahito Kanamura, Tadahiro Imada, Norikazu Nakamura, Naoya Okamoto, Toyoo Miyajima, Toshihide Kikkawa (Fujitsu Laboratories Ltd.) ED2012-75 CPM2012-132 LQE2012-103 |
We reported the threshold voltage (Vth) shift phenomena of insulated-gate GaN high electron mobility transistor (HEMT) f... [more] |
ED2012-75 CPM2012-132 LQE2012-103 pp.41-44 |
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