| IEICE Technical Committee Submission System Conference Schedule |
Online Proceedings [Sign in] Tech. Rep. Archives |
All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| SDM | 2023-06-26 11:30 |
Hiroshima | Hiroshima Univ. (Res. Inst. of Nanodevices) | Characterization of ultrathin SiO2/SiC interfaces by using self-assembled monolayers Ryo Okuhira (Kwansei Gakuin Univ.), Takamasa Kawanago (Tokyo Tech), Takuji Hosoi (Kwansei Gakuin Univ.)  SDM2023-29 |
We have successfully evaluated ultrathin SiO2/4H-SiC(0001) interface property by stacking self-assembled monolayer (SAM)... [more] | SDM2023-29 pp.7-10 |
| EA, US (Joint) |
2022-12-22 16:50 |
Hiroshima | Satellite Campus Hiroshima | [Poster Presentation]
Characteristics of YbGaN and YbAlN epitaxial thin film resonators Song Li, Junjun Jia, Takahiko Yanagitani (Waseda Univ.) US2022-64 |
Bulk acoustic wave (BAW) resonators based on AlN or GaN piezoelectric thin films are suitable for GHz frequency filters ... [more] | US2022-64 pp.74-79 |
| SDM | 2022-06-21 13:00 |
Aichi | Nagoya Univ. VBL3F | [Invited Talk]
Superiority of counter-doped MOSFET from the viewpoint of oxide/4H-SiC interface property Shigehisa Shibayama, Takuma Doi, Mitsuo Sakashita, Noriyuki Taoka (Nagoya Univ.), Mitsuaki Shimizu (AIST), Osamu Nakatsuka (Nagoya Univ.) SDM2022-24 |
To decrease channel resistance of 4H-SiC power MOSFET, there are two important approaches; (1) reducing the interface st... [more] | SDM2022-24 pp.1-4 |
| SDM | 2018-11-09 10:20 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Modeling of Electron Transport in 4H-SiC MOS Inversion Layers Hajime Tanaka, Nobuya Mori (Osaka Univ.) SDM2018-71 |
We formulated scattering mechanisms in 4H-SiC MOS interfaces and calculated the electron mobility by a Monte Carlo simul... [more] | SDM2018-71 pp.35-40 |
| SDM, EID | 2017-12-22 10:45 |
Kyoto | Kyoto University | Conduction mechanisms in heavily Al-doped 4H-SiC epilayers
-- Dependencies of resistivity on Al concentration and temperature -- Shinji Ozawa, Akinobu Takeshita, TAtsuya imamura, Kota Takano, Kazuya Okuda, Atsuki Hidaka, Hideharu Matsuura (OECU), Shiyang Ji, Kazuma Eto, Kazuoshi Kojima, Tomohisa Kato, Sadafumi Yoshida, Hajime Okumura (AIST) EID2017-12 SDM2017-73 |
To realize SiC n-channel insulated gate bipolar transistors (IGBTs) with very low on-resistance, it is essential to redu... [more] | EID2017-12 SDM2017-73 pp.5-8 |
| SDM, EID | 2017-12-22 11:00 |
Kyoto | Kyoto University | Temperature Dependent Hall Coefficient in Heavily Al-Doped 4H-SiC
-- Relationship between Inversion of Hall Coefficient and Conduction Mechanism -- Rinya Nishihata, Akinobu Takeshita, Tatsuya Imamura, Kota Takano, Kazuya Okuda, Shinji Ozawa, Atsuki Hidaka, Hideharu Matsuura (OECU), Shiyang Ji, Kazuma Eto, Kazutoshi Kojima, Tomohisa Kato, Sadafumi Yoshida, Hajime Okumura (AIST) EID2017-13 SDM2017-74 |
To realize SiC n-channel insulated gate bipolar transistors (IGBTs) with very low on-resistance, it is essential to redu... [more] | EID2017-13 SDM2017-74 pp.9-12 |
| SDM, EID | 2017-12-22 11:15 |
Kyoto | Kyoto University | Electric properties in Al-N codoped p-type 4H-SiC epilayers
-- Comparison between temperature dependent resistivity in Al-doped and codoped samples -- Atsuki Hidaka, Akinobu Takeshita, Tatsuya Imamura, kota Takano, Kazuya Okuda, Shinji Ozawa, Hideharu Matsuura (OECU), Shiyang Ji, Kazuma Eto, Kazutoshi Kojima, Tomohisa Kato, Sadafumi Yoshida, Hajime Okumura (AIST) EID2017-14 SDM2017-75 |
To realize SiC n-channel insulated gate bipolar transistors (IGBTs) with very low on-resistance, it is required to reduc... [more] | EID2017-14 SDM2017-75 pp.13-16 |
| SDM | 2016-06-29 14:10 |
Tokyo | Campus Innovation Center Tokyo | XPS Study on Potential Change and Electrical Dipole at SiO2/Semiconductor Interface Nobuyuki Fujimura, Akio Ohta, Hiromasa Watanabe, Katsunori Makihara, Seiichi Miyazaki (Nagoya Univ.) SDM2016-40 |
An evaluation method for estimating the valence band (VB) top from the vacuum level (VL) for semiconductors and dielectr... [more] | SDM2016-40 pp.43-47 |
| ED | 2016-01-20 10:55 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Lecture]
Low On-resistance SiC-MOSFET with Blocking Voltage of 3.3kV and Realization of the World's First All-SiC Traction Inverter Kenji Hamada, Shiro Hino, Naruhisa Miura, Hiroshi Watanabe, Shuhei Nakata, Eisuke Suekawa, Yuji Ebiike, Masayuki Imaizumi, Isao Umezaki, Satoshi Yamakawa (Mitsubishi Electric) ED2015-113 |
For the further efficiency improvement of existing power modules for railcar traction, we have developed MOSFETs with a ... [more] | ED2015-113 pp.7-12 |
| ED | 2015-07-24 15:35 |
Ishikawa | IT Business Plaza Musashi 5F | Electrical properties of SiC MOSFETs with various substrate impurity concentrations Hiroshi Yano (NAIST/Univ. Tsukuba), Hiroto Yuki, Takashi Fuyuki (NAIST) ED2015-41 |
We have investigated electrical properties of n-channel MOSFETs fabricated on Si-face 4H-SiC with various substrate impu... [more] | ED2015-41 pp.25-29 |
| SDM | 2015-06-19 10:50 |
Aichi | VBL, Nagoya Univ. | [Invited Lecture]
Investigation of SiC MOSFETs with 3C/4H Different Poly-Type Junctions Muentaka Noguchi, Toshiaki Iwamatsu, Naruhisa Miura, Shuhei Nakata, Satoshi Yamakawa (Mitsubishi Electric) SDM2015-41 |
SiliconCarbide (SiC) have different poly-types, which shows various energy bandgap. This suggests the possibility of SiC... [more] | SDM2015-41 pp.17-20 |
| SDM | 2015-06-19 11:10 |
Aichi | VBL, Nagoya Univ. | [Invited Lecture]
Characteristics of nitrogen incorporation at SiC/SiO2 interface on Si-face and C-face 4H-SiC Daisuke Mori, Kei Inoue, Hideaki Teranishi, Takayuki Hirose, Aki Takigawa (Fuji Electric) SDM2015-42 |
The chemical bonding states of Si and N at nitrided SiC/SiO2 interface were characterized by synchrotron radiation X-ray... [more] | SDM2015-42 pp.21-26 |
| SDM | 2015-06-19 11:30 |
Aichi | VBL, Nagoya Univ. | [Invited Lecture]
Effect of oxynitridation annealing on defect properties at SiO2/SiC MOS interface Wakana Takeuchi (Nagoya Univ.), Kensaku Yamamoto (DENSO CORP.), Mitsuo Sakashita (Nagoya Univ.), Takashi Kanemura (DENSO CORP.), Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) SDM2015-43 |
We have investigated the effect of NO-annealing for SiO2/4H-SiC interface properties. The electrical properties of the N... [more] | SDM2015-43 pp.27-30 |
| ED, CPM, SDM | 2015-05-29 09:55 |
Aichi | Venture Business Laboratory, Toyohashi University of Technology | Quantitative evaluation of temperature dependence of surface recombination velocities for 4H-SiC Kimihiro Kohama, Yuto Mori, Masashi Kato, Masaya Ichimura (NIT) ED2015-30 CPM2015-15 SDM2015-32 |
The surface recombination velocity is one of the limiting factors for the carrier lifetime, which is an important parame... [more] | ED2015-30 CPM2015-15 SDM2015-32 pp.71-76 |
| SDM, EID | 2014-12-12 16:15 |
Kyoto | Kyoto University | Frequency dependence of Split C-V characteristics in Si-face 4H-SiC n-MOSFETs Hiroto Yuki (NAIST), Hiroshi Yano (NAIST/Univ. Tsukuba) EID2014-33 SDM2014-128 |
Interface properties in 4H-SiC n-MOSFETs on Si-face were characterized by using split C-V method in the frequency range ... [more] | EID2014-33 SDM2014-128 pp.103-107 |
| SDM, EID | 2014-12-12 16:30 |
Kyoto | Kyoto University | Interface Characterization of 4H-SiC MOSFETs by Single Pulse Id-Vgs Measurements Kosuke Isono (NAIST), Hiroshi Yano (NAIST/Univ. Tsukuba) EID2014-34 SDM2014-129 |
SiC MOSFETs have suffered from issues such as threshold voltage instability and low channel mobility due to high interfa... [more] | EID2014-34 SDM2014-129 pp.109-113 |
| SDM, EID | 2014-12-12 16:45 |
Kyoto | Kyoto University | Temperature Dependence of Current Gain in 4H-SiC BJTs Satoshi Asada, Takafumi Okuda, Tsunenobu Kimoto, Jun Suda (Kyoto Univ.) EID2014-35 SDM2014-130 |
Temperature dependence of current gain from 140 to 460 K in a 4H-SiC bipolar junction transistor (SiC BJT) was investiga... [more] | EID2014-35 SDM2014-130 pp.115-118 |
| SDM | 2014-11-06 10:55 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Three-dimensional calculation of ion implantation to SiC substrate Minoru Okamoto, Mamoru Shimizu, Yasuyuki Ohkura, Ken Yamaguchi, Hideaki Koike (AdvanceSoft) SDM2014-98 |
[more] | SDM2014-98 pp.13-18 |
| SDM | 2014-10-17 10:40 |
Miyagi | Niche, Tohoku Univ. | Initial stage of oxidation on 4H-SiC by AR-XPS using angle-resolved X-ray photoelectron spectroscopy Tomoya Sasago, Shunta Yamahori, Hiroshi Nohira (Tokyo City Univ.) SDM2014-90 |
We have investigated the initial stage of oxidation on C-face 4H-SiC using angle-resolved X-ray photoelectron spectrosco... [more] | SDM2014-90 pp.35-39 |
| CPM, ED, SDM | 2014-05-29 13:20 |
Aichi | Deep levels near the valence band in p-type 4H-SiC epilayers with various Al concentrations Hiroki Nakane, Masashi Kato, Masaya Ichimura (NIT) ED2014-38 CPM2014-21 SDM2014-36 |
Understanding of the deep level is essential to control the carrier lifetime for ultrahigh-voltage SiC bipolar devices. ... [more] | ED2014-38 CPM2014-21 SDM2014-36 pp.101-104 |
|
[Return to Top Page]