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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 5 of 5  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2022-10-19
16:30		 Online Online [Invited Talk] Reliability improvement of SiC MOSFET by high-temperature CO2 annealing
Takuji Hosoi (Kwansei Gakuin Univ.), Takayoshi Shimura, Heiji Watanabe (Osaka Univ.) SDM2022-62		 Threshold voltage instability is one of the reliability concerns for SiC MOSFETs. NO post-oxidation annealing (NO-POA) i... [more] SDM2022-62
pp.34-37
R 2020-11-30
14:55		 Online Online Analysis for Degraded MLCC Using Voltage Contrast Method in SEM
Akira Saito (Murata) R2020-27		 To ensure the reliability of multi-layer ceramic capacitor (MLCC) while its miniaturization is accelerating, it is neces... [more] R2020-27
pp.21-24
SDM 2010-11-11
14:40		 Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Comprehensive understanding of oxygen vacancy induced effective work function modulation in high-k/metal gate stacks
Takuji Hosoi, Masayuki Saeki, Yuki Kita, Yudai Oku, Hiroaki Arimura, Naomu Kitano (Osaka Univ.), Kenji Shiraishi, Keisaku Yamada (Univ. Tsukuba), Takayoshi Shimura, Heiji Watanabe (Osaka Univ.) SDM2010-175		 Effective work function of p-type gate electrodes on Hf-based high-k dielectrics is known to decrease after high tempera... [more] SDM2010-175
pp.23-28
ED, OME 2007-09-21
11:25		 Fukuoka Kyushu Institute of Technology The growth mechanism of low-resistivity ITO films onto the glass substrates by a hot-cathode plasma sputtering method
Akihiko Kono, Fumiya Shoji (Kyushu Kyoritsu Univ.) ED2007-148 OME2007-35		 Tin-doped indium oxide (ITO) films fabricated on glass substrates using a hot-cathode plasma sputtering method exhibited... [more] ED2007-148 OME2007-35
pp.25-30
SDM 2007-06-08
10:30		 Hiroshima Hiroshima Univ. ( Faculty Club) The Effect of Nitrogen Addition into HfSiON on Threshold Voltage Shift
Chihiro Tamura, Tatsuya Naito (Univ. of Tsukuba), Motoyuki Sato, Seiji Inumiya (Selete), Ryu Hasunuma, Kikuo Yamabe (Univ. of Tsukuba) SDM2007-42		 The threshold voltage shift was analyzed for the FETs with HfSiOx or HfSiON films. It was found that the NBTI slope, B (... [more] SDM2007-42
pp.59-64
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