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Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM, ED, CPM 2017-05-26
09:55		 Aichi VBL, Nagoya University Suppression of surface recombination at the 4H-SiC (0001) Si-face by immersing aqueous solutions
Masashi Kato, Yoshihito Ichikawa, Masaya Ichimura (NITech), Tsunenobu Kimoto (Kyoto Univ.) ED2017-24 CPM2017-10 SDM2017-18		 Although surface recombination is one of the factors that affects the performance of bipolar SiC devices and SiC photoca... [more] ED2017-24 CPM2017-10 SDM2017-18
pp.51-54
ED, CPM, SDM 2015-05-29
09:55		 Aichi Venture Business Laboratory, Toyohashi University of Technology Quantitative evaluation of temperature dependence of surface recombination velocities for 4H-SiC
Kimihiro Kohama, Yuto Mori, Masashi Kato, Masaya Ichimura (NIT) ED2015-30 CPM2015-15 SDM2015-32		 The surface recombination velocity is one of the limiting factors for the carrier lifetime, which is an important parame... [more] ED2015-30 CPM2015-15 SDM2015-32
pp.71-76
SDM, ED, CPM 2013-05-16
13:30		 Shizuoka Shizuoka Univ. (Hamamatsu) Graduate School of Sci. and Technol. Evaluation of carrier lifetime for 4H-SiC surfaces treated by various processes
Yuto Mori, Masashi Kato, Masaya Ichimura (Nagoya Inst. of Tech.) ED2013-16 CPM2013-1 SDM2013-23		 For very high voltage SiC bipolar devices, the carrier lifetime is an important parameter which influences the device pe... [more] ED2013-16 CPM2013-1 SDM2013-23
pp.1-6
CPM, SDM, ED 2011-05-19
10:25		 Aichi Nagoya Univ. (VBL) Thickness and surface dependence of the carrier lifetime in free-standing n-type 4H-SiC epilayers
Masashi Kato, Atsushi Yoshida, Masaya Ichimura (Nagoya Inst. of Tech.) ED2011-4 CPM2011-11 SDM2011-17		 To fabricate very high voltage SiC devices, control of the carrier lifetime is extremely important. However, there have ... [more] ED2011-4 CPM2011-11 SDM2011-17
pp.15-20
ED, MW 2008-01-17
11:10		 Tokyo Kikai-Shinko-Kaikan Bldg. Improvement in reliability of InGaP/GaAs HBT's by ledge passivation
Fu-Ying Yang, Shinji Nozaki, Kazuo Uchida, Atsushi Koizumi (UEC) ED2007-217 MW2007-148		 Because of the exposed heavily carbor-doped GaAs base in the InGaP/GaAs HBT’s, the current gain is significantly reduced... [more] ED2007-217 MW2007-148
pp.61-66
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