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All Technical Committee Conferences (Searched in: All Years)
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Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
ED |
2013-08-09 11:20 |
Toyama |
University of Toyama |
Selective area growth of InSb on Si(111) substrate by using Sb induced surface reconstruction Wang Xin, Masayuki Mori, Koichi Maezawa (Univ. of Toyama) ED2013-49 |
Recently, devices with three-dimensional structure such as nanowire field effect transistor (NW-FETs) and FinFETs has ex... [more] |
ED2013-49 pp.61-65 |
ED |
2008-06-14 11:20 |
Ishikawa |
Kanazawa University |
Heteroepitaxial growth of InSb films via Si(111)-√7×√3-In surface reconstruction Masayuki Mori, Mitsufumi Saito, Kyohei Nagashima, Koji Ueda, Tatsuo Yoshida, Koichi Maezawa (Univ. Toyama) ED2008-37 |
The InSb films grown via In-Sb bi-layer (Si(111)-2×2-InSb surface reconstruction) rotates by 30 ° with respect to Si sub... [more] |
ED2008-37 pp.81-84 |
ED |
2008-06-14 11:45 |
Ishikawa |
Kanazawa University |
Effects of In and Sb mono-layers to form rotated InSb films on a Si(111) substrate Mitsufumi Saito, Masayuki Mori, Koji Ueda, Koichi Maezawa (Univ. Toyama) ED2008-38 |
A new method for an InSb heteroepitaxial growth on a Si(111) substrate was introduced in our previous work, in which an ... [more] |
ED2008-38 pp.85-90 |
SDM |
2008-06-10 09:55 |
Tokyo |
An401・402, Inst. Indus. Sci., The Univ. of Tokyo |
Gate Dielectrics Interface Control for III-V MISFET Tetsuji Yasuda, Noriyuki Miyata (AIST), Akihiro Ohtake (NIMS) SDM2008-49 |
Introduction of III-V semiconductors to the n channel of CMOS devices is one of the options to sustain performance impro... [more] |
SDM2008-49 pp.41-46 |
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