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Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2012-06-21
13:35		 Aichi VBL, Nagoya Univ. Surface Segregation Behavior of B, Ga, Sb, and As Dopant Atoms on Ge(100) and Ge(111) Examined with a First-principles Method
Fumiya Iijima, Kentaro Sawano (TCU), Jiro Ushio (CRL), Takuya Maruizumi, Yasuhiro Shiraki (TCU) SDM2012-52		 To understand surface segregation behaviour of B, Ga, As, and Sb dopant atoms on Ge (100) and Ge (111) surfaces, the pot... [more] SDM2012-52
pp.47-51
CPM 2011-10-26
16:25		 Fukui Fukui Univ. Fabrication of silicon solar cells with low impurity Si with transition metal contaminants
Daiki Takeda, Satoru Tuduki, Katsuaki Momiyama, Kensaku Kanomata, Takahiko Suzuki, Fumihiko Hirose (Yamagata Univ.) CPM2011-116		 (To be available after the conference date) [more] CPM2011-116
pp.37-39
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