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Committee Date Time Place Paper Title / Authors Abstract Paper #
ED 2015-12-22
11:35		 Miyagi RIEC, Tohoku Univ Evaluation of GaN by using Laser-induced THz emission
Yuji Sakai, Iwao Kawayama (Osaka Univ.), Hidetoshi Nakanishi (SCREEN), Masayoshi Tonouchi (Osaka Univ.) ED2015-106		 Wide-gap semiconductors have received significant attention for their advantages over existing semiconductors. Here, We ... [more] ED2015-106
pp.89-92
SDM 2009-11-12
15:05		 Tokyo Kikai-Shinko-Kaikan Bldg. HiSIM-IGBT: A Compact IGBT Model for Circuit Simulation
Masataka Miyake, Hiroki Masuoka, Uwe Feldmann, Mitiko Miura-Mattausch (Hiroshima Univ.) SDM2009-139		 HiSIM-IGBT, a compact IGBT (Insulated Gate Bipolar Transistor) model for circuit simulation has been developed. The mode... [more] SDM2009-139
pp.23-27
ICD, SDM 2008-07-17
11:20		 Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Progress of compact model for CMOS circuit design -- Performance of HiSIM model based on the surface potential model --
Tatsuya Ohguro (Hiroshima Univ./Toshiba), Mitiko Miura-Mattausch (Hiroshima Univ.) SDM2008-133 ICD2008-43		 HiSIM model based on the surface potential model has been popular because the model can accurately simulate analog and R... [more] SDM2008-133 ICD2008-43
pp.29-34
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