| IEICE Technical Committee Submission System Conference Schedule |
Online Proceedings [Sign in] Tech. Rep. Archives |
All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| ED, CPM, LQE | 2021-11-26 14:55 |
Online | Online | High-breakdown-voltage Al0.36Ga0.64N-channel HFETs with a dual AlN/AlGaInN barrier layer Akiyoshi Inoue, Sakura Tanaka, Takashi Egawa, Makoto Miyoshi (NIT)  ED2021-32 CPM2021-66 LQE2021-44 |
In this study, we fabricated and characterized heterojunction field-effect transistors (HFETs) based on an Al0.36Ga0.64N... [more] | ED2021-32 CPM2021-66 LQE2021-44 pp.79-82 |
| SDM, ICD, ITE-IST [detail] | 2021-08-18 11:00 |
Online | Online | [Invited Talk]
Demonstration of HfO2-based ferroelectric ultra-thin films with low operating voltage, low process temperature, and high endurance
-- Toward embedded memory in advanced technology nodes -- Kasidit Toprasertpong, Kento Tahara (Univ. Tokyo), Yukinobu Hikosaka, Ko Nakamura, Hitoshi Saito (Fujitsu Semiconductor Memory Solution), Mitsuru Takenaka, Shinichi Takagi (Univ. Tokyo) SDM2021-38 ICD2021-9 |
In this study, we demonstrate the importance of the thickness scaling of Hf0.5Zr0.5O2 thin films for the ferroelectric m... [more] | SDM2021-38 ICD2021-9 pp.42-47 |
| EMD, R | 2021-02-12 15:00 |
Online | Online | [Invited Talk]
Reliability physics issues for electronic devices
-- Failure mechanisms that still need to be physically clarified -- Yasushi Kadota (RICOH Co.,Ltd.) R2020-37 EMD2020-28 |
Many kind of electronic devices, including semiconductor devices, have been using in various fields and applications in ... [more] | R2020-37 EMD2020-28 pp.19-24 |
| LQE, CPM, ED | 2020-11-26 13:30 |
Online | Online | High-breakdown-voltage AlGaN channel HFETs with selective-area regrowth ohmic contacts Akiyoshi Inoue, Hiroki Harada, Mizuki Yamanaka, Takashi Egawa, Makoto Miyoshi (NIT) ED2020-7 CPM2020-28 LQE2020-58 |
Al0.19Ga0.81N-channel metal-insulator-semiconductor (MIS) HFETs employing a quaternary AlGaInN barrier layer and a selec... [more] | ED2020-7 CPM2020-28 LQE2020-58 pp.25-28 |
| SSS | 2019-09-24 13:00 |
Tokyo | Analysis of dielectric breakdown characteristics for additive manufacturing materials made by selective laser sintering Hiroaki Arai, Yuki Yamauchi, Takeshi Ueno (TIRI) SSS2019-17 |
Additive Manufacturing (3D printer) can easily design and make parts with complex shapes. Because of that, it is used in... [more] | SSS2019-17 pp.1-4 |
|
| LQE, OPE, CPM, EMD, R | 2019-08-22 16:00 |
Miyagi | [Invited Talk]
Reconsideration of TDDB Statistics of Thick Dielectric Films Used in SiC/GaN Power/RF Devices and Image Sensors Kenji Okada (TowerJazz Panasonic Semiconductor) R2019-25 EMD2019-23 CPM2019-24 OPE2019-52 LQE2019-30 |
Recent advances of GaN/SiC power devices, RF/MMIC (monolithic microwave integrated circuit) devices, and also Image Sens... [more] | R2019-25 EMD2019-23 CPM2019-24 OPE2019-52 LQE2019-30 pp.29-34 |
|
| SDM | 2018-06-25 16:15 |
Aichi | Nagoya Univ. VBL3F | Concern of Ferroelectric HfO2 Films Brought by Large Coercive Field Shinji Migita, Hiroyuki Ota (AIST), Akira Toriumi (Univ. Tokyo) SDM2018-25 |
Ferroelectric HfO2-based thin films are attractive memory materials for application in LSI. These ferroelectrics have la... [more] | SDM2018-25 pp.43-46 |
| SDM | 2016-06-29 13:30 |
Tokyo | Campus Innovation Center Tokyo | A resistive switching device based on breakdown and local anodic oxidation Kuniyuki Kakushima, Hitoshi Wakabayashi, Kazuo Tsutsui, Hiroshi Iwai (Tokyo Tech.) SDM2016-38 |
We propose a resistive switching device with CeOx and SiO2 stacked layers on a Si substrate. Breakdown spots are created... [more] | SDM2016-38 pp.33-36 |
| SDM | 2015-06-19 10:50 |
Aichi | VBL, Nagoya Univ. | [Invited Lecture]
Investigation of SiC MOSFETs with 3C/4H Different Poly-Type Junctions Muentaka Noguchi, Toshiaki Iwamatsu, Naruhisa Miura, Shuhei Nakata, Satoshi Yamakawa (Mitsubishi Electric) SDM2015-41 |
SiliconCarbide (SiC) have different poly-types, which shows various energy bandgap. This suggests the possibility of SiC... [more] | SDM2015-41 pp.17-20 |
| EMCJ, EMD | 2013-07-12 13:30 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Resistance fluctuation noise of a logarithmic
-- Leather resistance that varies logarithmically -- Masanobu Ban (Tokyo MLTC) EMCJ2013-43 EMD2013-28 |
Leather resistance gave higher voltage is recorded in units of milliseconds. Resistance change is recorded in a logarith... [more] | EMCJ2013-43 EMD2013-28 pp.25-27 |
| ICD | 2011-04-19 16:15 |
Hyogo | Kobe University Takigawa Memorial Hall | Analyses on Co-relation between Low and High Resistance States in ReRAM Consisting of Binary-Transition-Metal-Oxides Hayato Tanaka (Tottori Univ), Kentaro Kinoshita, Satoru Kishida (Tottori Univ./TEDREC) ICD2011-20 |
Resistive Random Access Memory (ReRAM) is attracting attention as a non-volatile memory for the next generation. The con... [more] | ICD2011-20 pp.111-116 |
| EMCJ, IEE-EMC | 2009-12-18 14:15 |
Gifu | NIFS | Study on Radiated Electromagnetic Field Intensity due to Micro Gap Discharge as the low voltage ESD. Ken Kawamata (Hachinohe Inst. of Tech.), Shigeki Minegishi (Tohoku Gakuin Univ.), Osamu Fujiwara (Nagoya Inst. of Tech.) |
The breakdown field strength and radiated electromagnetic field intensity due to micro gap discharge were examined in ex... [more] | EMCJ2009-95 pp.59-64 |
| AP | 2009-09-04 14:50 |
Aomori | Hachinohe Inst. of Tech. | Experimental Study of Radiated Electromagnetic Field Intensity due to Micro Gap Discharge Ken Kawamata (Hachinohe Inst. of Tech.), Shigeki Minegishi (Tohoku Gakuin Univ.), Osamu Fujiwara (Nagoya Inst. of Tech.) AP2009-100 |
The breakdown field strength and radiated electromagnetic field intensity due to micro gap discharge were examined in ex... [more] | AP2009-100 pp.121-124 |
| EMD, EMCJ | 2009-05-22 14:15 |
Tokyo | Kanda camupus, Nippon Institute of Technology | Relation Between Radiated Electromagnetic Field Intensity and Electrode Condition due to Micro Gap Discharge Ken Kawamata (Hachinohe Inst. of Tech.), Shigeki Minegishi (Tohoku Gakuin Univ.), Osamu Fujiwara (Nagoya Inst. of Tech.) EMCJ2009-17 EMD2009-9 |
he relationship between breakdown field strength and radiated electromagnetic field intensity was examined in experiment... [more] | EMCJ2009-17 EMD2009-9 pp.45-48 |
| EMCJ, EMD | 2008-07-18 14:40 |
Tokyo | Kikai-Shinko-Kaikan Bldg | Experimental Study on Radiated Electromagnetic Field Strength due to Micro Gap Discharge Below 1kV Ken Kawamata (Hachinohe Inst. of Tech.), Shigeki Minegishi, Akira Haga (Tohoku Gakuin Univ.), Osamu Fujiwara (NIT) EMCJ2008-45 EMD2008-27 |
Abstract Relationship between breakdown field strength and radiated electromagnetic field strength was examined in expe... [more] | EMCJ2008-45 EMD2008-27 pp.27-30 |
| EMCJ | 2006-06-12 | Hokkaido | Hokkaido Univ. | Estimation of Gap Breakdown Field Due to Air Discharge through Hand-Held Metal Piece from Charged Human Yoshinori Taka, Osamu Fujiwara (NIT) |
With the high speed and low voltage operation of ICs, serious malfunction of high-tech information devices is known to b... [more] | |
[Return to Top Page]