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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 14 of 14  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
MRIS, ITE-MMS 2022-12-08
13:55
Ehime Ehime Univ. + Online
(Primary: On-site, Secondary: Online)
Current Induced Magnetization Switching of CPP-GMR with Perpendicular Magnetized SAF Pinned Layer
Da Pan, Zhe Cao, Daiki Oshima, Takeshi Kato (Nagoya Univ.) MRIS2022-19
For the development of three-dimensional magnetic memory devices, we investigated current-induced magnetization reversal... [more] MRIS2022-19
pp.7-10
MRIS, CPM, ITE-MMS [detail] 2022-10-27
13:30
Nagano Shinshu Univ.
(Primary: On-site, Secondary: Online)
Investigation of magnetic structure of C11b Cr-Al thin film by magnetoresistance effect measurement
Sota Iguchi, Sosuke Fujiwara, Kentaro Toyoki, Yu Shiratsuchi, Ryouichi Nakatani (Osaka Univ.) MRIS2022-6 CPM2022-37
The enrichment of library for antiferromagnetic material is essential for the development of magnetoresistance (MR) devi... [more] MRIS2022-6 CPM2022-37
pp.1-5
CPM 2021-03-03
14:00
Online Online Ferromagnetic Single-Electron Devices Comprising Co Nanoparticles Assembled by Use of On-Chip Electromagnets
Kenta Fujikura, Tetsuya Urae, Kazuma Sekine, Masataka Moriya, Hiroshi Shimada (UEC), Ayumi Hirano-Iwata (TU), Fumihiko Hirose (YU), Yoshinao Mizugaki (UEC) CPM2020-70
In this research, cobalt nanoparticles, which are ferromagnets, were assembled in a nanogap by magnetic field alignment ... [more] CPM2020-70
pp.55-58
SDM 2019-10-24
14:20
Miyagi Niche, Tohoku Univ. SDM2019-64 (To be available after the conference date) [more] SDM2019-64
pp.55-58
MRIS, ITE-MMS, IEE-MAG 2019-10-17
14:15
Fukuoka Kyushu University (Nishijin Plaza) Galvanomagnetic effects of nanomagnetic thin films under high pressure
Kanta Matsutomo, Taisei Ariki, Keishi Miyazaki, Takashi Kimura, Akihiro Mitsuda (Kyushu Univ) MRIS2019-18
(To be available after the conference date) [more] MRIS2019-18
pp.25-26
ED 2017-04-21
10:55
Miyagi   Electric and Magnetic Field Responses of Single-Electron Transistors Composed of Superconducting Island with Ferromagnetic Leads
Yoshinao Mizugaki, Masashi Takiguchi, Nobuyuki Tamura, Hiroshi Shimada (UEC Tokyo) ED2017-13
We report electric and magnetic field responses of single-electron transistors (SETs) comprising ferromagnetic lead elec... [more] ED2017-13
pp.47-50
MRIS, ITE-MMS 2013-10-25
10:50
Fukuoka Fukuoka-Kotsu-Center Bldg., Hakata Bus Terminal [Invited Talk] Giant tunnel magnetoresistance in perfectly lattice-matched magnetic tunnel junctions -- Current status of spinel MgAl2O4-based tunnel barriers --
Hiroaki Sukegawa, Koichiro Inomata, Seiji Mitani (NIMS) MR2013-18
Tunnel magnetoresistance (TMR) devices with a monocrystalline MgAl2O4 barrier were successfully developed. The lattice m... [more] MR2013-18
pp.35-40
SDM, ED 2013-02-28
10:15
Hokkaido Hokkaido Univ. Correlation between polarity of magnetoresistance ratio and tunnel resistance in ferromagnetic SET with superconductive island
Masashi Takiguchi, Masataka Moriya, Hiroshi Shimada, Yoshinao Mizugaki (Univ. of Electro- Comm.) ED2012-140 SDM2012-169
Negative magnetoresistance ratio is shown in ferromagnet-superconductor-ferromagnet double tunnel junctions. An excessiv... [more] ED2012-140 SDM2012-169
pp.65-70
ITE-MMS, ITE-CE, MRIS [detail] 2013-01-25
17:05
Osaka   Huge Magnetoresistance due to Magneto-Electric Effect of Co Nanoparticles in C60-Co Granular Films
Shuhei Toyokawa, Eiiti Tamura, Eiji Shikoh, Teruya Shinjo, Yuichiro Ando (Osaka Univ.), Vlado Lazarov, Takafumi Hirohata (York Univ.), Masashi Shiraishi (Osaka Univ.) MR2012-44
C60-Co granular film is a film where Co nanoparticles are dispersed in C60 matrix. Various researches on magnetoresistan... [more] MR2012-44
pp.29-32
ED, SDM 2012-02-08
10:20
Hokkaido   Electrical characteristics of MgF_(2)/Fe/MgF_(2) thin films
Takuma Ishikawa, Eita Sato, Kouichi Hamada, Masashi Arita, Yasuo Takahashi (Hokkaido Univ.) ED2011-152 SDM2011-169
On carefully prepared SiO2/Si substrates, MgF2/Fe-nanodots/MgF2 granular films were prepared, and fundamental electric p... [more] ED2011-152 SDM2011-169
pp.59-64
ITE-MMS, MRIS 2010-03-12
16:20
Aichi Nagoya Univ. Spin filtering through a ferromagnetic La2NiMnO6 tunnel barrier
Toshifumi Katsuragi, Yuya Miyazaki, Yuichi Shiji, Masaaki Tanaka, Ko Mibu (Nagoya Inst. of Tech.), Kouta Kondou (Kyoto Univ.), Shinya Kasai (NIMS), Teruo Ono (Kyoto Univ.) MR2009-65
We investigated magnetic tunnel junctions (MTJs) La0.7Sr0.3MnO3(LSMO)/LaTiO3/La2NiMnO6(LNMO)/Cr/Au which were fabricated... [more] MR2009-65
pp.39-43
ED, SDM 2010-02-22
16:05
Okinawa Okinawaken-Seinen-Kaikan Fabrication of Planar-Type Ferromagnetic Tunnel Junctions Using Field-Emission-Induced Electromigration
Kazutoshi Takiya, Yusuke Tomoda, Takato Watanabe, Watari Kume, Shunsuke Ueno, Jun-ichi Shirakashi (Tokyo Univ. of Agr. & Tech) ED2009-203 SDM2009-200
We study nanometer-sized spintronic devices with ferromagnetic tunnel junctions. Tunnel magnetoresitance (TMR) observed ... [more] ED2009-203 SDM2009-200
pp.41-45
SDM, ED 2009-06-24
15:00
Overseas Haeundae Grand Hotel, Busan, Korea Transient characteristic of fabricated Magnetic Tunnel Junction (MTJ) programmed with CMOS circuit
Masashi Kamiyanagi, Fumitaka Iga, Shoji Ikeda (Tohoku Univ.), Katsuya Miura (Tohoku Univ./Hitachi), Jun Hayakawa (Hitachi), Haruhiro Hasegawa, Takahiro Hanyu, Hideo Ohno, Tetsuo Endoh (Tohoku Univ.) ED2009-52 SDM2009-47
In this paper, it is shown that our fabricated MTJ of 60x180${\rm nm^2}$, which is connected to the MOSFET in series by ... [more] ED2009-52 SDM2009-47
pp.9-12
SDM, ED 2009-06-24
15:15
Overseas Haeundae Grand Hotel, Busan, Korea Study of the DC Performance of Fabricated Magnetic Tunnel Junction Integrated on Back-end Metal Line of CMOS Circuits
Fumitaka Iga, Masashi Kamiyanagi, Shoji Ikeda (Tohoku Univ.), Katsuya Miura (Tohoku Univ./Hitachi), Jun Hayakawa (Hitachi), Haruhiro Hasegawa, Takahiro Hanyu, Hideo Ohno, Tetsuo Endoh (Tohoku Univ.) ED2009-53 SDM2009-48
In this paper, we have succeeded in the fabrication of high performance Magnetic Tunnel Junction (MTJ) which is integrat... [more] ED2009-53 SDM2009-48
pp.13-16
 Results 1 - 14 of 14  /   
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