Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
MRIS, ITE-MMS |
2022-12-08 13:55 |
Ehime |
Ehime Univ. + Online (Primary: On-site, Secondary: Online) |
Current Induced Magnetization Switching of CPP-GMR with Perpendicular Magnetized SAF Pinned Layer Da Pan, Zhe Cao, Daiki Oshima, Takeshi Kato (Nagoya Univ.) MRIS2022-19 |
For the development of three-dimensional magnetic memory devices, we investigated current-induced magnetization reversal... [more] |
MRIS2022-19 pp.7-10 |
MRIS, CPM, ITE-MMS [detail] |
2022-10-27 13:30 |
Nagano |
Shinshu Univ. (Primary: On-site, Secondary: Online) |
Investigation of magnetic structure of C11b Cr-Al thin film by magnetoresistance effect measurement Sota Iguchi, Sosuke Fujiwara, Kentaro Toyoki, Yu Shiratsuchi, Ryouichi Nakatani (Osaka Univ.) MRIS2022-6 CPM2022-37 |
The enrichment of library for antiferromagnetic material is essential for the development of magnetoresistance (MR) devi... [more] |
MRIS2022-6 CPM2022-37 pp.1-5 |
CPM |
2021-03-03 14:00 |
Online |
Online |
Ferromagnetic Single-Electron Devices Comprising Co Nanoparticles Assembled by Use of On-Chip Electromagnets Kenta Fujikura, Tetsuya Urae, Kazuma Sekine, Masataka Moriya, Hiroshi Shimada (UEC), Ayumi Hirano-Iwata (TU), Fumihiko Hirose (YU), Yoshinao Mizugaki (UEC) CPM2020-70 |
In this research, cobalt nanoparticles, which are ferromagnets, were assembled in a nanogap by magnetic field alignment ... [more] |
CPM2020-70 pp.55-58 |
SDM |
2019-10-24 14:20 |
Miyagi |
Niche, Tohoku Univ. |
SDM2019-64 |
(To be available after the conference date) [more] |
SDM2019-64 pp.55-58 |
MRIS, ITE-MMS, IEE-MAG |
2019-10-17 14:15 |
Fukuoka |
Kyushu University (Nishijin Plaza) |
Galvanomagnetic effects of nanomagnetic thin films under high pressure Kanta Matsutomo, Taisei Ariki, Keishi Miyazaki, Takashi Kimura, Akihiro Mitsuda (Kyushu Univ) MRIS2019-18 |
(To be available after the conference date) [more] |
MRIS2019-18 pp.25-26 |
ED |
2017-04-21 10:55 |
Miyagi |
|
Electric and Magnetic Field Responses of Single-Electron Transistors Composed of Superconducting Island with Ferromagnetic Leads Yoshinao Mizugaki, Masashi Takiguchi, Nobuyuki Tamura, Hiroshi Shimada (UEC Tokyo) ED2017-13 |
We report electric and magnetic field responses of single-electron transistors (SETs) comprising ferromagnetic lead elec... [more] |
ED2017-13 pp.47-50 |
MRIS, ITE-MMS |
2013-10-25 10:50 |
Fukuoka |
Fukuoka-Kotsu-Center Bldg., Hakata Bus Terminal |
[Invited Talk]
Giant tunnel magnetoresistance in perfectly lattice-matched magnetic tunnel junctions
-- Current status of spinel MgAl2O4-based tunnel barriers -- Hiroaki Sukegawa, Koichiro Inomata, Seiji Mitani (NIMS) MR2013-18 |
Tunnel magnetoresistance (TMR) devices with a monocrystalline MgAl2O4 barrier were successfully developed. The lattice m... [more] |
MR2013-18 pp.35-40 |
SDM, ED |
2013-02-28 10:15 |
Hokkaido |
Hokkaido Univ. |
Correlation between polarity of magnetoresistance ratio and tunnel resistance in ferromagnetic SET with superconductive island Masashi Takiguchi, Masataka Moriya, Hiroshi Shimada, Yoshinao Mizugaki (Univ. of Electro- Comm.) ED2012-140 SDM2012-169 |
Negative magnetoresistance ratio is shown in ferromagnet-superconductor-ferromagnet double tunnel junctions. An excessiv... [more] |
ED2012-140 SDM2012-169 pp.65-70 |
ITE-MMS, ITE-CE, MRIS [detail] |
2013-01-25 17:05 |
Osaka |
|
Huge Magnetoresistance due to Magneto-Electric Effect of Co Nanoparticles in C60-Co Granular Films Shuhei Toyokawa, Eiiti Tamura, Eiji Shikoh, Teruya Shinjo, Yuichiro Ando (Osaka Univ.), Vlado Lazarov, Takafumi Hirohata (York Univ.), Masashi Shiraishi (Osaka Univ.) MR2012-44 |
C60-Co granular film is a film where Co nanoparticles are dispersed in C60 matrix. Various researches on magnetoresistan... [more] |
MR2012-44 pp.29-32 |
ED, SDM |
2012-02-08 10:20 |
Hokkaido |
|
Electrical characteristics of MgF_(2)/Fe/MgF_(2) thin films Takuma Ishikawa, Eita Sato, Kouichi Hamada, Masashi Arita, Yasuo Takahashi (Hokkaido Univ.) ED2011-152 SDM2011-169 |
On carefully prepared SiO2/Si substrates, MgF2/Fe-nanodots/MgF2 granular films were prepared, and fundamental electric p... [more] |
ED2011-152 SDM2011-169 pp.59-64 |
ITE-MMS, MRIS |
2010-03-12 16:20 |
Aichi |
Nagoya Univ. |
Spin filtering through a ferromagnetic La2NiMnO6 tunnel barrier Toshifumi Katsuragi, Yuya Miyazaki, Yuichi Shiji, Masaaki Tanaka, Ko Mibu (Nagoya Inst. of Tech.), Kouta Kondou (Kyoto Univ.), Shinya Kasai (NIMS), Teruo Ono (Kyoto Univ.) MR2009-65 |
We investigated magnetic tunnel junctions (MTJs) La0.7Sr0.3MnO3(LSMO)/LaTiO3/La2NiMnO6(LNMO)/Cr/Au which were fabricated... [more] |
MR2009-65 pp.39-43 |
ED, SDM |
2010-02-22 16:05 |
Okinawa |
Okinawaken-Seinen-Kaikan |
Fabrication of Planar-Type Ferromagnetic Tunnel Junctions Using Field-Emission-Induced Electromigration Kazutoshi Takiya, Yusuke Tomoda, Takato Watanabe, Watari Kume, Shunsuke Ueno, Jun-ichi Shirakashi (Tokyo Univ. of Agr. & Tech) ED2009-203 SDM2009-200 |
We study nanometer-sized spintronic devices with ferromagnetic tunnel junctions. Tunnel magnetoresitance (TMR) observed ... [more] |
ED2009-203 SDM2009-200 pp.41-45 |
SDM, ED |
2009-06-24 15:00 |
Overseas |
Haeundae Grand Hotel, Busan, Korea |
Transient characteristic of fabricated Magnetic Tunnel Junction (MTJ) programmed with CMOS circuit Masashi Kamiyanagi, Fumitaka Iga, Shoji Ikeda (Tohoku Univ.), Katsuya Miura (Tohoku Univ./Hitachi), Jun Hayakawa (Hitachi), Haruhiro Hasegawa, Takahiro Hanyu, Hideo Ohno, Tetsuo Endoh (Tohoku Univ.) ED2009-52 SDM2009-47 |
In this paper, it is shown that our fabricated MTJ of 60x180${\rm nm^2}$, which is connected to the MOSFET in series by ... [more] |
ED2009-52 SDM2009-47 pp.9-12 |
SDM, ED |
2009-06-24 15:15 |
Overseas |
Haeundae Grand Hotel, Busan, Korea |
Study of the DC Performance of Fabricated Magnetic Tunnel Junction Integrated on Back-end Metal Line of CMOS Circuits Fumitaka Iga, Masashi Kamiyanagi, Shoji Ikeda (Tohoku Univ.), Katsuya Miura (Tohoku Univ./Hitachi), Jun Hayakawa (Hitachi), Haruhiro Hasegawa, Takahiro Hanyu, Hideo Ohno, Tetsuo Endoh (Tohoku Univ.) ED2009-53 SDM2009-48 |
In this paper, we have succeeded in the fabrication of high performance Magnetic Tunnel Junction (MTJ) which is integrat... [more] |
ED2009-53 SDM2009-48 pp.13-16 |