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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 6 of 6  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
ED, SDM 2018-02-28
17:05		 Hokkaido Centennial Hall, Hokkaido Univ. Low-temperature charge pumping on silicon-on-insulator devices
Tokinobu Watanabe (Univ. Toyama), Masahiro Hori, Yukinori Ono (Shizuoka Univ.) ED2017-115 SDM2017-115		 The charge pumping (CP) was applied to a SOI p-i-n diode at 0.3 – 300 K . We found that The CP current measured below 10... [more] ED2017-115 SDM2017-115
pp.51-56
ED, SDM 2017-02-24
10:25		 Hokkaido Centennial Hall, Hokkaido Univ. Time-domain charge pumping on silicon-on-insulator metal-oxide-semiconductor devices
Tokinobu Watanabe (Shizuoka Univ./Univ. Toyama), Hori Masahiro, Ono Yukinori (Shizuoka Univ.) ED2016-131 SDM2016-148		 Time-domain charge pumping, which monitors transient currents during the charge pumping process, was applied to silicon-... [more] ED2016-131 SDM2016-148
pp.7-12
ED, SDM 2016-03-03
16:20		 Hokkaido Centennial Hall, Hokkaido Univ. Low-temperature charge pumping for SiO2/Si interface states
Tokinobu Watanabe, Masahiro Hori, Yukinori Ono (Univ. of Toyama) ED2015-125 SDM2015-132		 The charge pumping (CP) currents are measured at 7 – 300 K with a SOI PIN diode. The CP current is found to exhibi... [more] ED2015-125 SDM2015-132
pp.23-26
SDM 2013-06-18
15:10		 Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Lecture] High performance of SiC-MOS devices by POCl3 annealing
Hiroshi Yano, Tomoaki Hatayama, Takashi Fuyuki (NAIST) SDM2013-58		 Effects of phosphorus incorporation by POCl3 annealing on electrical properties of 4H-SiC MOS devices were investigated.... [more] SDM2013-58
pp.71-76
SDM 2013-06-18
17:25		 Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Lecture] 4H-SiC MOS interface states studied by electron spin resonance spectroscopy
T. Umeda (Univ. of Tsukuba), M. Okamoto, R. Kosugi (AIST), R. Arai, Y. Satoh (Univ. of Tsukuba), S. Harada, Hajime Okumura (AIST), T. Makino, Takeshi Ohshima (JAEA) SDM2013-64		 Normally-off 4H-SiC MOSFETs (Metal-Oxide-Semiconductor Field Effect Transistors) are promising devices for power electro... [more] SDM2013-64
pp.101-105
SDM, ED
(Workshop)		 2012-06-27
11:30		 Okinawa Okinawa Seinen-kaikan [Invited Talk] Gate Stack Technologies for Silicon Carbide Power MOS Devices
Takuji Hosoi, Takashi Kirino, Yusuke Uenishi, Daisuke Ikeguchi, Atthawut Chanthaphan (Osaka Univ.), Akitaka Yoshigoe, Yuden Teraoka (JAEA), Shuhei Mitani, Yuki Nakano, Takashi Nakamura (ROHM), Takayoshi Shimura, Heiji Watanabe (Osaka Univ.) 		Silicon carbide (SiC) is a promising material for high-power electronic devices. Although SiO$_2$ dielectric film can be... [more]
 Results 1 - 6 of 6  /   
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