Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
EMCJ, MW, EST, IEE-EMC [detail] |
2022-10-14 10:50 |
Akita |
Akita University (Primary: On-site, Secondary: Online) |
A Study on Planar Metallic Photonic Crystal Resonators Jiaxing FAN, Chunping Chen, Liangchao JIang, Ming Wang, Takaharu Hiraoka, Tetsuo Anada (Kanagawa Univ) EMCJ2022-55 MW2022-101 EST2022-65 |
In recent years, the application of planar metallic photonic crystal (MPhC) structures have been attracting a lot of att... [more] |
EMCJ2022-55 MW2022-101 EST2022-65 pp.102-107 |
MW |
2018-12-13 09:45 |
Kanagawa |
Kanagawa Univ. |
Simulation and Measurement of Metallic Photonic Crystal Point-Defect-Cavity with Air-gap Chenglong Xie, Chun-Ping Chen, Zejun Zhang, Tetsuo Anada (Kanagawa Univ.) MW2018-114 |
A conventional metallic photonic crystal (M-PhC) structure is constructed by a periodic arrangement of metallic rods in ... [more] |
MW2018-114 pp.1-5 |
ED, CPM, SDM |
2018-05-24 15:50 |
Aichi |
Toyohashi Univ. of Tech. (VBL) |
Temperature dependence of hydrogen-related donor in FZ-Silicon Akira Kiyoi, Katsumi Nakamura (Mitsubishi Electric Corp.) ED2018-19 CPM2018-6 SDM2018-14 |
Temperature dependence of Hydrogen-related Donor (HD) and silicon self-interstitials has been investigated in order to c... [more] |
ED2018-19 CPM2018-6 SDM2018-14 pp.23-28 |
SDM |
2017-11-09 13:30 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
[Invited Talk]
Impurity Diffusion Modeling in SiC Masashi Uematsu (Keio Univ.) SDM2017-64 |
SiC is an attractive material for the application of high-power electronic devices. In this article, the current status ... [more] |
SDM2017-64 pp.15-20 |
WPT, MW |
2017-04-28 16:15 |
Tokyo |
Kikai-Shinko Kaikan, B2-1 |
Simulation and Measurement of Metallic Photonic Crystal Point-Defect-Cavity in Microwave Regime Chun-Ping Chen, Chenglong Xie, Daisuke Tetsuda, Shun Kikawa, Tetsuo Anada, Zejun Zhang (Kanagawa Univ.) WPT2017-7 MW2017-7 |
By changing the radius of the rod in the center of a point-defect-cavity (PDC) based on metallic photonic crystals (M-Ph... [more] |
WPT2017-7 MW2017-7 pp.29-34 |
SDM |
2016-11-11 14:30 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
[Invited Talk]
Application of DFT Calculation for the Development of High Quality Si and Ge Substrates
-- From Ultra Large Diameter Crystal Pulling to Metal Gettering -- Koji Sueoka (Okayama Pref. Univ.) SDM2016-87 |
During the last decade, considerable progress has been made in understanding the properties and behavior of the vacancy ... [more] |
SDM2016-87 pp.49-54 |
SDM |
2015-11-05 10:00 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
[Invited Talk]
Current Status of Impurity Diffusion Modeling in Semiconductors Masashi Uematsu (Keio Univ.) SDM2015-84 |
With the scaledown of CMOS devices, it is crucial to establish a diffusion model to accurately predict impurity diffusio... [more] |
SDM2015-84 pp.1-6 |
EST |
2015-09-03 10:05 |
Okinawa |
Oohama-Nobumoto-Kinenkan, Ishigaki Island, Okinawa, Japan |
Design of Terahertz Band-pass Filter with Novel Coupling Scheme Using Monopole Mode of Metallic Photonic Crystal Point Defect Resonator Takaharu Hiraoka, Chun-Ping Chen, Noriki Kato, Tetsuo Anada (Kanagawa Univ.), Shigeki Takeda (Antenna Giken), Zhewang Ma (Saitama Univ.) EST2015-53 |
In the frequency region below several terahertz, metals act like nearly perfect reflectors with no significant absorptio... [more] |
EST2015-53 pp.1-6 |
SDM |
2014-11-07 10:50 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Stress and Doping Impact on Intrinsic Point Defect Behaviour in Growing Single Crystal Silicon Koji Sueoka, Eiji Kamiyama, Kozo Nakamura (Okayama Pref. Univ.), Jan Vanhellemont (Ghent Univ.) SDM2014-104 |
For the mass-production of 450 mm-diameter defect-free Si crystals, one has to take into account the impact of thermal s... [more] |
SDM2014-104 pp.47-52 |
ED, LQE, CPM |
2012-11-29 11:05 |
Osaka |
Osaka City University |
Applicationo of III-V nitride films to photovoltaic device Masatomo Sumiya, Liwen Sang, Mickael Lozac'h (NIMS) ED2012-67 CPM2012-124 LQE2012-95 |
We have proposed the solar cell system composing III-V nitride film with wider band gap. III-V nitride solar cell is mec... [more] |
ED2012-67 CPM2012-124 LQE2012-95 pp.9-12 |
SDM |
2009-11-13 15:25 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Atomic Scale Analysis of the Degradation Mechanism of the Integrity High-k/Metal-gate Interface Caused by the Interaction between Point-Defects and Residual Strain around the Interface Ken Suzuki, Yuta Itoh, Tatsuya Inoue, Hideo Miura (Tohoku Univ.), Hideki Yoshikawa, Keisuke Kobayashi (National Inst. for Materials Science), Seiji Samukawa (Tohoku Univ.) SDM2009-149 |
Control of the interfacial crystallographic structure between a dielectric film and a gate electrode is one of the most ... [more] |
SDM2009-149 pp.79-84 |
LQE, OPE |
2005-06-24 09:40 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Fabrication of InP-based semiconductor photonic crystal by HI-based ICP etching Kengo Nozaki, Junichi Hashimoto, Toshihide Ide, Eiichi Mizuta, Masahiro Shiga, Toshihiko Baba (Yokohama Nat'l Univ.) |
We successfully formed the photonic crystal consisting of airholes with smooth sidewalls and high aspect ratio into GaIn... [more] |
OPE2005-15 LQE2005-14 pp.7-10 |