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Committee Date Time Place Paper Title / Authors Abstract Paper #
MW, ED 2005-11-17
13:35
Saga   A K-band AlGaN/GaN HFET MMIC Amplifier on Sapphire using novel superlattice cap layer
Masaaki Nishijima, Tomohiro Murata, Yutaka Hirose, Masahiro Hikita, Noboru Negoro, Hiroyuki Sakai, Yasuhiro Uemoto, Kaoru Inoue, Tsuyoshi Tanaka, Daisuke Ueda (Matsushita Electric)
We have developed a K-band AlGaN/GaN HFET MMIC amplifier by applying an AlGaN/GaN superlattice (SL) capped structure on ... [more] ED2005-165 MW2005-120
pp.39-43
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