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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| NLP, CAS | 2023-10-06 15:10 |
Gifu | Work plaza Gifu | A PWM/digital Converter for Improved Conversion Resolution using Frequency Multiplicator Zhang He, Andrino Robles Roberto, Tomochika Harada (Yamagata Univ.)  CAS2023-43 NLP2023-42 |
For IoT (Internet of Things) devices, a reduction in power consumption is desired. To reduce power consumption, researc... [more] | CAS2023-43 NLP2023-42 pp.58-61 |
| SDM, ICD, ITE-IST [detail] | 2017-08-01 13:00 |
Hokkaido | Hokkaido-Univ. Multimedia Education Bldg. | [Invited Lecture]
A 3.2ppm/℃ Second-Order Temperature Compensated CMOS On-Chip Oscillator Using Voltage Ratio Adjusting Technique Guoqiang Zhang, Kosuke Yayama, Akio Katsushima, Takahiro Miki (Renesas Electronics) SDM2017-39 ICD2017-27 |
A CMOS on-chip oscillator (OCO) for local interconnection network (LIN) bus is presented. The temperature dependence of ... [more] | SDM2017-39 ICD2017-27 p.69 |
| ICD, CPSY | 2016-12-16 16:10 |
Tokyo | Tokyo Institute of Technology | Analysis of Wide-Range-Temperature Compensation Using Isothermal-Point and Back-Gate-Bias-Control for ISFET-Array Makoto Ogi, Zule Xu, Takayuki Kawahara (TUS) ICD2016-99 CPSY2016-105 |
pH sensors using ion-sensitive field effect transistors (ISFETs) are sensitive to temperature variation, which limits th... [more] | ICD2016-99 CPSY2016-105 pp.155-160 |
| CPM, OPE, LQE, EMD | 2011-08-26 10:15 |
Hokkaido | Hokkaido Univ. | Property control of wavelength selective switch using MEMS mirror Tohru Matsuura, Etsu Hashimoto, Mitsuo Usui, Koichi Hadama, Nobuaki Matsuura, Yuzo Ishii, Shingo Uchiyama, Tomomi Sakata, Nobuhiro Shimoyama (NTT) EMD2011-48 CPM2011-92 OPE2011-83 LQE2011-46 |
A new wavelength selective switch (WSS) is fabricated using a two-axis micro electro mechanical systems (MEMS) mirror ar... [more] | EMD2011-48 CPM2011-92 OPE2011-83 LQE2011-46 pp.87-91 |
| US | 2010-09-29 15:15 |
Miyagi | Tohoku Univ. | Study of Correlation between SiO2 Film Properties and Temperature Coefficients of Frequency in SAW Devices with SiO2/LiNbO3 Structure Satoru Matsuda, Michio Miura, Takashi Matsuda, Masanori Ueda, Yoshio Satoh (TAIYO YUDEN CO.,LTD.), Ken-ya Hashimoto (Grad. School of Eng., Chiba Univ.) US2010-53 |
In the temperature compensation SAW device with SiO2/LiNbO3 structure, SiO2 film properties (the peak width at half max... [more] | US2010-53 pp.29-32 |
| EMCJ, ITE-BCT | 2009-03-13 14:40 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Solid State Power Amplifier with GaN FET for Ku-band Ryo Mochizuki, Tatsuya Fukushima, Hiroaki Iwabuchi, Yoshio Yamada, Takao Kato (Toshiba Corp.) EMCJ2008-121 |
In this paper, we present a solid state power amplifier (SSPA) for Ku-band applications. This is the first report of SSP... [more] | EMCJ2008-121 pp.43-48 |
| OFT | 2008-10-17 11:15 |
Tokyo | Optical fiber sensor cable for pipe thinning detection in high temperature environment conditions. Shimei Tanaka, Naoki Okada, Matsuhiro Miyamoto (FJK), Kinzo Kishida, Li Che-Hsien, Yoshiaki Yamauchi (NB), Hiroaki Suzuki (ChAS) OFT2008-37 |
We developed heat-resistant optical fiber sensor cable, exhibiting excellent sensitivity to local strain variations. By ... [more] | OFT2008-37 pp.15-18 |
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| VLD, ICD | 2008-03-06 09:40 |
Okinawa | TiRuRu | A-90dBm Sensitivity 0.13μm CMOS Bluetooth Transceiver Operating in Wide Temperature Range Kenichi Agawa, Hideaki Majima, Hiroyuki Kobayashi, Masayuki Koizumi, Shinichiro Ishizuka, Takeshi Nagano, Makoto Arai, Yutaka Shimizu, Go Urakawa (Toshiba) VLD2007-145 ICD2007-168 |
A 2.4GHz 0.13um CMOS Bluetooth transceiver achieving the high RX sensitivity and high-quality TX signals between -40C an... [more] | VLD2007-145 ICD2007-168 pp.7-12 |
| ICD | 2006-04-14 14:45 |
Oita | Oita University | An Internal Voltage Generation System of Flash Memory Module Jiro Ishikawa, Toshihiro Tanaka, Akira Kato, Takashi Yamaki, Yukiko Umemoto, Takeshi Shimozato, Isao Nakamura, Yutaka Shinagawa (Renesas Technology Corp.) |
We present a new internal voltage generation system of flash memory module embedded in a microcontroller. One of the fea... [more] | ICD2006-20 pp.109-113 |
| MW | 2005-12-16 09:25 |
Hiroshima | Development of a High Efficiency OFDM Power Amplifier with a pre-distortion circuit that uses Temperature Compensation in the 7GHz band Kazuhisa Haeiwa (Hiroshima City Univ.), Tohru Abe, Izuru Murasaki (NHK), Tetsuo Yoshida, Jyunichi Togashi (Toshiba Co.) |
We developed a high efficiency power amplifier with a pre-distortion circuit that uses temperature compensation in the I... [more] | MW2005-129 pp.7-12 |
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| ICD | 2005-04-14 16:15 |
Fukuoka | 4Gb Multilevel AG-AND Flash Memory with 10MB/s Programming Throughput Hideaki Kurata, Yoshitaka Sasago, Kazuo Otsuga, Tsuyoshi Arigane, Tetsufumi Kawamura, Takashi Kobayashi, Hitoshi Kume (Hitachi), Kazuki Homma, Kenji Kozakai, Satoshi Noda, Teruhiko Ito, Masahiro Shimizu, Yoshihiro Ikeda, Osamu Tsuchiya, Kazunori Furusawa (RENESAS) |
We fabricated a 4Gb multilevel AG-AND flash memory using 90nm CMOS technology. By using an inversion-layer local-bitline... [more] | ICD2005-11 pp.53-58 |
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