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Committee Date Time Place Paper Title / Authors Abstract Paper #
EID, ITE-IDY, IEIJ-SSL, SID-JC, IEE-EDD [detail] 2020-01-23
13:05		 Tottori Tottori Univ. [Poster Presentation] CVD growth of h-BN thin films on c-plane sapphire and Si (111) substrates
Tomoyasu Nakama, Kazuki Matsusita, Taira Watanabe, Hiroko Kominami, Kazuhiko Hara (Shizuoka Univ.) 		The hexagonal boron nitride (h-BN) thin films were grown on c-plane sapphire and Si (111) substrates by low-pressure che... [more]
LQE, ED, CPM 2014-11-28
11:50		 Osaka   Deep UV light-emitting diodes containing a p-AlGaN contacting layer with high Al content
Masafumi Jo, Noritoshi Maeda, Hideki Hirayama (RIKEN) ED2014-89 CPM2014-146 LQE2014-117		 AlGaN light-emitting diodes (LEDs) have been extensively studied for highly efficient light sources in deep ultraviolet ... [more] ED2014-89 CPM2014-146 LQE2014-117
pp.77-80
OPE, LQE, EMD, CPM, OME
(Joint) [detail]		 2012-06-22
15:55		 Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] UV light laser and DUV light emitting devices
Yoshinobu Aoyagi (Ritsumeikan Univ.) 		In this report a concept of nonlinear photonic crystal with hetero-structure will be introduced and UV laser by the seco... [more]
EID, ITE-IDY, IEE-EDD, IEIJ-SSL 2011-01-28
14:35		 Kochi Kochi University of Technology Photoluminescence Characterization of AlGaN-Based Crystals for Deep Ultraviolet Region
Kouhei Igarashi, Ryo Ishioka, Yusuke Tsukada, Takeshi Fukuda, Zentaro Honda (Saitama Univ.), Hideki Hirayama (RIKEN), Norihiko Kamata (Saitama Univ.) EID2010-31		 In order to improve the quality of AlGaN-based crystals for deep-UV light emission, we studied photoluminescence (PL) of... [more] EID2010-31
pp.41-44
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