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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 20 of 20  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
ED, LQE, CPM 2018-11-30
09:50
Aichi Nagoya Inst. tech. Chemical Bath Deposition of Undoped and Li Doped CuO Films and Thier Structural and Electrical Properties
Hideyuki Okada, Tomoaki Terasako, Kenji Gochoh, Naoya Hayashimoto (Ehime Univ.) ED2018-43 CPM2018-77 LQE2018-97
Undoped and Li-doped CuO films were grown on Au seed layers by chemical bath deposition (CBD) using the mixed aqueous so... [more] ED2018-43 CPM2018-77 LQE2018-97
pp.49-54
ED, LQE, CPM 2018-11-30
11:15
Aichi Nagoya Inst. tech. Fabrication and evaluation of p-type Cu-AlOx thin film by photochemical deposition method
Masanari Umemura, Masaya Ichimura (Nagoya Inst. Tech.) ED2018-46 CPM2018-80 LQE2018-100
AlOx has many physical properties suitable for electronic devices such as wide bandgap and high dielectric breakdown ele... [more] ED2018-46 CPM2018-80 LQE2018-100
pp.65-70
SDM, EID 2017-12-22
10:45
Kyoto Kyoto University Conduction mechanisms in heavily Al-doped 4H-SiC epilayers -- Dependencies of resistivity on Al concentration and temperature --
Shinji Ozawa, Akinobu Takeshita, TAtsuya imamura, Kota Takano, Kazuya Okuda, Atsuki Hidaka, Hideharu Matsuura (OECU), Shiyang Ji, Kazuma Eto, Kazuoshi Kojima, Tomohisa Kato, Sadafumi Yoshida, Hajime Okumura (AIST) EID2017-12 SDM2017-73
To realize SiC n-channel insulated gate bipolar transistors (IGBTs) with very low on-resistance, it is essential to redu... [more] EID2017-12 SDM2017-73
pp.5-8
SDM, EID 2017-12-22
11:00
Kyoto Kyoto University Temperature Dependent Hall Coefficient in Heavily Al-Doped 4H-SiC -- Relationship between Inversion of Hall Coefficient and Conduction Mechanism --
Rinya Nishihata, Akinobu Takeshita, Tatsuya Imamura, Kota Takano, Kazuya Okuda, Shinji Ozawa, Atsuki Hidaka, Hideharu Matsuura (OECU), Shiyang Ji, Kazuma Eto, Kazutoshi Kojima, Tomohisa Kato, Sadafumi Yoshida, Hajime Okumura (AIST) EID2017-13 SDM2017-74
To realize SiC n-channel insulated gate bipolar transistors (IGBTs) with very low on-resistance, it is essential to redu... [more] EID2017-13 SDM2017-74
pp.9-12
SDM, EID 2017-12-22
11:15
Kyoto Kyoto University Electric properties in Al-N codoped p-type 4H-SiC epilayers -- Comparison between temperature dependent resistivity in Al-doped and codoped samples --
Atsuki Hidaka, Akinobu Takeshita, Tatsuya Imamura, kota Takano, Kazuya Okuda, Shinji Ozawa, Hideharu Matsuura (OECU), Shiyang Ji, Kazuma Eto, Kazutoshi Kojima, Tomohisa Kato, Sadafumi Yoshida, Hajime Okumura (AIST) EID2017-14 SDM2017-75
To realize SiC n-channel insulated gate bipolar transistors (IGBTs) with very low on-resistance, it is required to reduc... [more] EID2017-14 SDM2017-75
pp.13-16
EMCJ, IEE-EMC, MW, EST [detail] 2013-10-24
13:25
Miyagi Tohoku Univ. Evaluation of Horn Antenna Made of Low Resistance Conductive Resin
Yuya Ishii, Ryosuke Suga (Aoyama Gakuin Univ.), Go Nishimura, Shingo Onodera (Idemitsu Kosan), Osamu Hashimoto (Aoyama Gakuin Univ.) EMCJ2013-68 MW2013-108 EST2013-60
Generally,a waveguide,resonator and horn antenna are made of high-conductive metal. There are,however,some problems as f... [more] EMCJ2013-68 MW2013-108 EST2013-60
pp.47-51
CPM 2012-10-26
13:50
Niigata   Effect of a low-temperature buffer layer on the properties of ZnO films grown on glass substrates using catalytically generated high-energy H2O
Takahiro Oyanagi, Kazuki Takezawa, Takahiro Kato (Nagaoka Univ. Technol), Hironori Katagiri, Kazuo Jimbo (NNCT), Kanji Yasui (Nagaoka Univ. Technol) CPM2012-94
ZnO thin films were grown through a reaction between dimethylzinc and high-energy H_{2}O produced by a Pt-catalyzed H_{2... [more] CPM2012-94
pp.7-11
CPM 2012-10-26
14:15
Niigata   Examination of Resistivity of AZO Thin Films Deposited by Sputtering Method
Katsuhito Nagoshi, Yusuke Tomiguchi, Hidehiko Shimizu, Haruo Iwano, Takahiro Kawakami, Yasuo Fukushima, Kotaro Nagata, Nozomu Tsuboi, Takahiro Nomoto (Niigata Univ.) CPM2012-95
We examined the effects of the substrate temperature and post-annealing in vacuum less than 2.0×10-6 Torr of AZO thin fi... [more] CPM2012-95
pp.13-16
EMD, CPM, OME 2012-06-22
14:45
Tokyo Kikai-Shinko-Kaikan Bldg. Characteristics of ZnO films grown on glass substrates using high-energy H2O generated by a catalytic reaction -- Effect of a sputter deposited buffer layer --
Takahiro Oyanagi, Souichi Satomoto, Kai Sato, Takahiro Kato (Nagaoka Univ. Technol.), Hironori Katagiri, Kazuo Jimbo (Nagaoka Nat. College Technol.), Kanji Yasui (Nagaoka Univ. Technol.) EMD2012-10 CPM2012-27 OME2012-34
ZnO thin films were grown through a reaction between dimethylzinc and high-energy H_2O produced by a Pt-catalyzed H_2 O_... [more] EMD2012-10 CPM2012-27 OME2012-34
pp.13-18
OME 2011-01-19
14:15
Aichi   Electronic Properties of TiO2 Thin Films under UV Light Irradiation
Yusuke Watanabe, Yuji Muramoto, Noriyuki Shimizu (Meijo Univ.) OME2010-66
TiO2 has photocatalysis. When UV light irradiated, electron-hole pairs are generated in TiO2. The source of photocatalys... [more] OME2010-66
pp.39-43
SDM 2010-12-17
10:20
Kyoto Kyoto Univ. (Katsura) X-Ray Detectors (Silicon Drift Detectors) using Higher-Resistivity Si -- Simulation Results --
Seigo Kitanoya, Seiji Nishikawa, Hideharu Matsuura (Osaka Electro-Communication Univ.) SDM2010-186
Several regulations for hazardous substances have been enforced due to the increase of awareness of environmental issues... [more] SDM2010-186
pp.7-12
EA, US
(Joint)
2010-01-26
14:50
Osaka   Determination of Acoustical Physical Constants of ZnO Single Crystal by the Ultrasonic Microspectroscopy Technology
Jun-ichi Kushibiki, Yuji Ohashi, Mototaka Arakawa, Tomoya Tanaka, Sho Yoshida, Yuusuke Kourai, Noboru Sakagami (Tohoku Univ.) US2009-109
A new set of acoustical physical constants for ZnO was obtained by ultrasonic microspectroscopy (UMS) using very conduct... [more] US2009-109
pp.123-128
SDM 2009-12-04
13:30
Nara NAIST Simplification of Structures of Si X-ray Detectors (Silicon Drift Detector) -- Evaluation by simulation --
Seigo Kitanoya, Takayuki Miyake, Yukihiro Taniguchi, Hideharu Matsuura (Osaka Electro-Comm Univ.) SDM2009-160
Several regulations for hazardous substances have been enforced due to the increase of awareness of environmental issues... [more] SDM2009-160
pp.49-54
SDM 2009-11-13
11:15
Tokyo Kikai-Shinko-Kaikan Bldg. A Novel Monte Carlo Simulation to Evaluate the Size Effect of Resistivity for Scaled Metallic Interconnects
Takashi Kurusu, Makoto Wada, Noriaki Matsunaga, Akihiro Kajita, Hiroyoshi Tanimoto, Nobutoshi Aoki, Yoshiaki Toyoshima, Hideki Shibata (Toshiba Corp.) SDM2009-145
Recently, the size effect on resistivity in very narrow and thin metallic wires is a crucial problem on development of s... [more] SDM2009-145
pp.55-60
EMD 2009-07-17
13:55
Hokkaido Chitose Arcadia Plaza A Study on the Voltage Rise in Pd Contacts
Hiroyuki Ishida, Shunsuke Sasaki, Shosuke Suzuki, Masanari Taniguchi (Tohoku Bunka Gakuen Univ.) EMD2009-22
The contact phenomena have the relationship to the asperities on the contact surface. Dr. Harada et al. clarified experi... [more] EMD2009-22
pp.7-12
EA, US
(Joint)
2009-01-29
14:15
Kyoto   Investigation of Determination Procedures of Acoustical Physical Constants of Class 6mm Single Crystals by the Ultrasonic Microspectroscopy Technology
Jun-ichi Kushibiki, Yuji Ohashi, Mototaka Arakawa, Tomoya Tanaka (Tohoku Univ.) US2008-77
We theoretically and numerically investigated procedures of accurately determining the acoustical physical constants of ... [more] US2008-77
pp.27-32
OME 2008-12-11
13:25
Tokyo Kikai-Shinko-Kaikan Bldg. VI characteristics of organic semiconductors by using CTAB
Yu Kawaguchi, Atsumi Ozawa, Hajime Imai (Japan Women's Univ.) OME2008-77
We have evaluated organic semiconductors using the surfactant material that is n-Cethyl-trymethyl-ammonium Bromid:CTAB t... [more] OME2008-77
pp.7-11
CPM 2008-10-30
14:55
Niigata Niigata Univ. Characteristic of AZO Thin Films Deposited by SBD Method
Takuya Honma, Kaoru Satou, Takeharu Shimomura, Rijin Syou, Hidehiko Shimizu, Haruo Iwano (Niigata Univ.), Yoichi Hoshi (Tokyo Polytechnio Univ.) CPM2008-79
In order to clarify a problem in sputtering deposition process when zinc oxide films of transparent conductive oxides we... [more] CPM2008-79
pp.23-28
ED, SDM 2007-06-25
17:10
Overseas Commodore Hotel Gyeongju Chosun, Gyeongju, Korea Efficient Activation of Dopant in Poly-Si film using Excimer Laser Annealing
Takashi Noguchi (University of the Ryukyus)
Efficient activation of doped Si film using low temperature process is important to realize a high performance Si TFT. D... [more]
EMCJ 2005-11-25
14:50
Tokyo NTT Musashino Research and Development Center Exanination of Shielding Effectiveness for Conductive elastomer Gasket
Fumitake Endo (TWC)
EMI gasket are used for many product, however gasket has lot of type,
that difficult to choose for own application. T... [more]
EMCJ2005-108
pp.11-14
 Results 1 - 20 of 20  /   
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