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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 20 of 21  /  [Next]  
Committee Date Time Place Paper Title / Authors Abstract Paper #
ED, IEE-BMS, IEE-MSS 2023-08-18
14:25
Tokyo
(Primary: On-site, Secondary: Online)
Evaluation of photoresponsive properties of metal/Nb:SrTiO3 junction -- Towards the realization of optoelectronic synapse device --
Shin Sata, Yumeng Zheng, Kentaro Kinoshita (Tokyo Univ. of Sci.) ED2023-11
Sn-doped In_2O_3(ITO)/Nb:SrTiO_3(NSTO) junctions are expected to be a optoelectronic synapse with tunable characteristic... [more] ED2023-11
pp.6-9
ED, IEE-BMS, IEE-MSS 2022-08-18
15:20
Tokyo Kikai-Shinko-Kaikan Bldg. B3-2
(Primary: On-site, Secondary: Online)
Neuromorphic computing using photo-induced current properties in ITO/Nb:SrTiO3 junction -- For reservoir computing application --
Yutaro Yamazaki, Hiroyuki Kai, Kentaro Kinoshita (Tokyo Univ. of Sci.) ED2022-21
Recently, needs for edge computing have been increasing, and methods to reduce computational cost while maintaining high... [more] ED2022-21
pp.17-20
CPM 2021-10-27
15:10
Online Online Characterization of HfO2 film for Resistive Random Access Memory
Yuki Kawai, Masaru Sato, Mayumi B Takeyama (Kitami Inst. of Tech.) CPM2021-31
In recent years, resistive random access memory has been attracting attention because it can operate faster and consume ... [more] CPM2021-31
pp.43-45
CPM 2020-10-29
16:40
Online Online Preparation of low-temperature-deposited ZrO2 film applicable to RRAM
Masaru Sato, Yuki Kawai, Takayuki Mukai, Mayumi B. Takeyama (Kitami Inst. of tech.) CPM2020-21
In order to form insulating films applicable to resistive random access memory, we have prepared low-temperature-deposit... [more] CPM2020-21
pp.38-40
SDM, ED, CPM 2019-05-16
16:15
Shizuoka Shizuoka Univ. (Hamamatsu) Evaluation of switching characteristics of Ta2O5-δ based analog resistive memory using Cu and Ta top electrode
Yuanlin Li, Atsushi Tsurumaki-Fukuchi, Masashi Arita (Hokkaido Univ.), Takashi Morie (Kyushu Inst. Tech.), Yasuo Takahashi (Hokkaido Univ.) ED2019-16 CPM2019-7 SDM2019-14
We present the differences of two mechanisms’ initial states and multilevel switching behavior using Ta2O5-δ ReRAM. For ... [more] ED2019-16 CPM2019-7 SDM2019-14
pp.29-34
SDM 2016-06-29
13:30
Tokyo Campus Innovation Center Tokyo A resistive switching device based on breakdown and local anodic oxidation
Kuniyuki Kakushima, Hitoshi Wakabayashi, Kazuo Tsutsui, Hiroshi Iwai (Tokyo Tech.) SDM2016-38
We propose a resistive switching device with CeOx and SiO2 stacked layers on a Si substrate. Breakdown spots are created... [more] SDM2016-38
pp.33-36
ICD 2016-04-14
13:00
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Lecture] Visualization of Filament of ReRAM during Resistive Switching by in-situ Transmission Electron Microscopy
Yasuo Takahashi (Hokkaido Univ.), Masaki Kudo (Kyusyu Univ.), Masashi Arita (Hokkaido Univ.) ICD2016-5
Resistive random access memories (ReRAMs) have been investigated as a next generation non-volatile memory, where 16-Gbit... [more] ICD2016-5
pp.21-26
SDM, ICD 2015-08-25
09:30
Kumamoto Kumamoto City [Invited Talk] Low-Power Embedded ReRAM Technology for IoT Applications
Makoto Ueki, Akira Tanabe, Hiroshi Sunamura, Mitsuru Narihiro, Kazuya Uejima, Koji Masuzaki, Naoya Furutake, Akira Mitsuiki, Koichi Takeda, Takashi Hase, Yoshihiro Hayashi (Renesas Electronics) SDM2015-65 ICD2015-34
A low-power 2Mb ReRAM macro was developed in 90 nm CMOS platform, demonstrating lower power data-writing (x1/7-x1/10) an... [more] SDM2015-65 ICD2015-34
pp.41-46
SDM 2015-06-19
13:20
Aichi VBL, Nagoya Univ. Impact of Embedded Ti Nanodots on Resistive Switching Characteristics of Si-rich Oxides
Yuusuke Kato, Takashi Arai, Akio Ohta, Katsunori Makihara, Seiichi Miyazaki (Nagoya Univ.) SDM2015-46
We have studied the formation of Ti Nanodots (NDs) by remote-H2 plasma treatment and an impact of Ti-NDs embedding into ... [more] SDM2015-46
pp.41-45
SDM, EID 2014-12-12
17:45
Kyoto Kyoto University Study on Formative Mechanism of Conductive Path in Resistive Random Access Memory (ReRAM) -- Analyses of Various NiO Surface States Using Ab Initio Calculations --
Takumi Moriyama (Tottori Univ.), Takahiro Yamasaki, Takahisa Ohno (NIMS), Satoru Kishida, Kentaro Kinoshita (Tottori Univ.) EID2014-39 SDM2014-134
For practical use of Resistive Random Access Memory (ReRAM), clarifying physical properties of conducting path created i... [more] EID2014-39 SDM2014-134
pp.135-138
SDM 2014-06-19
15:40
Aichi VBL, Nagoya Univ. [Invited Lecture] Temperature Dependence of Resistance of Conductive Nano-filament in Resistance Change Memory
Shintaro Otsuka, Yoshifumi Hamada, Tomohiro Shimizu, Shoso Shingubara (Kansai Univ.) SDM2014-57
Resistance change memory is expected to become one of next generation non-volatile memories. However, there is a questio... [more] SDM2014-57
pp.75-78
ED, SDM 2014-02-28
11:40
Hokkaido Hokkaido Univ. Centennial Hall Direct observation of conductive filaments during MoOx/Cu ReRAM switching
Yuuki Ohno, Takahiro Hiroi, Masaki Kudo, Kouichi Hamada, Masashi Arita, Yasuo Takahashi (Hokkaido Univ.) ED2013-148 SDM2013-163
While a conductive filament formed by movement of the metal ions in the solid electrolyte is considered as the mechanism... [more] ED2013-148 SDM2013-163
pp.89-94
SDM 2013-06-18
13:55
Tokyo Kikai-Shinko-Kaikan Bldg. Resistive Memory Effect of Bio-nanoparticle in Si Oxide Film
Mutsunori Uenuma (Osaka Univ.), Takahiko Ban, Ichiro Yamashita, Yukiharu Uraoka (NAIST) SDM2013-55
We demonstrated a novel biological process based on a use of a supra molecular protein as a reaction cage in which to fo... [more] SDM2013-55
pp.57-60
ICD, IPSJ-ARC 2013-02-01
11:40
Tokyo   Programming Circuit of Multi-level ReRAM Utilizing Voltage Sense-Amplifier
Taiki Ibe, Kazuya Nakayama, Akio Kitagawa (Kanazawa Univ.) ICD2012-126
For multi-level ReRAM memory, a novel read circuit using a VSA (Voltage Sense Amplifier) is proposed. This circuit compa... [more] ICD2012-126
pp.45-49
SDM 2012-12-07
16:30
Kyoto Kyoto Univ. (Katsura) Memory characteristics of ReRAM filament confined in localized area.
Sang-gyu Koh, Kentaro Kinoshita, Takahiro Fukuhara, Yusuke Sawai, Satoru Kishida (Tottori Univ.) SDM2012-136
Clarification of memory characteristics of tiny cell is important for practical use of resistive random access memory (R... [more] SDM2012-136
pp.123-127
SDM, OME 2012-04-27
14:40
Okinawa Okinawa-Ken-Seinen-Kaikan Bldg. Effects of Guided Filament Formation in NiO-ReRAM Utilizing Bio Nano Process -- Control of defects in thin films --
Mutsunori Uenuma, Takahiko Ban, Zheng Bin, Ichiro Yamashita, Yukiharu Uraoka (NAIST) SDM2012-4 OME2012-4
Controllable positioning of conductive filament in resistive memory is demonstrated using gold nanoparticles (GNPs). A G... [more] SDM2012-4 OME2012-4
pp.15-20
ICD 2011-04-18
11:40
Hyogo Kobe University Takigawa Memorial Hall [Invited Talk] ReRAM Test Macro with High Speed Read/Program Circuit -- Conductive Bridge ReRAM with 2.3GB/s Read throughput and 216MB/s Program-throughput --
Keiichi Tsutsui, Wataru Otsuka, Koji Miyata, Makoto Kitagawa, Tomohito Tsushima (Sony) ICD2011-3
In this work, we present a 4Mb conductive bridge ReRAM test macro realizing 2.3GB/s read-throughput, 216MB/s program-thr... [more] ICD2011-3
pp.13-18
ICD 2011-04-19
16:15
Hyogo Kobe University Takigawa Memorial Hall Analyses on Co-relation between Low and High Resistance States in ReRAM Consisting of Binary-Transition-Metal-Oxides
Hayato Tanaka (Tottori Univ), Kentaro Kinoshita, Satoru Kishida (Tottori Univ./TEDREC) ICD2011-20
Resistive Random Access Memory (ReRAM) is attracting attention as a non-volatile memory for the next generation. The con... [more] ICD2011-20
pp.111-116
NC 2010-10-23
14:30
Fukuoka Kyushu Inst. Tech. (Kitakyushu Sci. and Res. Park) A ReRAM-based Analog Synaptic Device exhibiting Spike-Timing-Dependent Plasticity
Nobuo Akou, Tetsuya Asai (Hokkaido Univ.), Takeshi Yanagida, Tomoji Kawai (Osaka Univ.), Yoshihito Amemiya (Hokkaido Univ.) NC2010-46
We propose a STDP synaptic device that employs a resistive RAM (ReRAM). The device is a CMOS-ReRAM-hybrid circuit that c... [more] NC2010-46
pp.23-28
SDM 2010-06-22
17:10
Tokyo An401・402 Inst. Indus. Sci., The Univ. of Tokyo Resistive Memory utilizing Ferritin Protein with Nano Particle -- Control of a Current Path using Metal Nano Particle --
Mutsunori Uenuma, Kentaro Kawano (NAIST/CREST JST), Shigeo Yoshii, Ichiro Yamashita (NAIST/Panasonic Corp.), Yukiharu Uraoka (NAIST/CREST JST) SDM2010-48
This study reports controlled single conductive path in ReRAM by embedding metal nano particles (NPs) in NiO film. Nano ... [more] SDM2010-48
pp.85-88
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