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Committee Date Time Place Paper Title / Authors Abstract Paper #
ED, CPM, SDM 2015-05-28
15:15		 Aichi Venture Business Laboratory, Toyohashi University of Technology Control of N composition of GaAsN alloy grown by surface nitridation
Noriyuki Urakami, Keisuke Yamane, Hiroto Sekiguchi, Hiroshi Okada, Akihiro Wakahara (Toyohashi Tech.) ED2015-20 CPM2015-5 SDM2015-22		 We researched growth conditions effect for N composition and luminescence property on dilute nitride GaAsN alloy grown b... [more] ED2015-20 CPM2015-5 SDM2015-22
pp.21-26
CPM 2013-08-01
14:10		 Hokkaido   Growth of (In)GaAsN thin films for Ultra High Efficiency Multi-Junction Solar Cells by Atomic Layer Epitaxy
Hidetoshi Suzuki, Tomohiro Haraguchi, Toshihiro Yamauchi, Atsuhiko Fukuyama, Tetsuo Ikari (Univ. of Miyazaki) CPM2013-41		 High quality GaAsN thin films were fabricated by atomic layer epitaxy (ALE). The effects of gas flow sequences
on self-... [more]		 CPM2013-41
pp.11-15
SDM, ED, CPM 2013-05-16
15:45		 Shizuoka Shizuoka Univ. (Hamamatsu) Graduate School of Sci. and Technol. Formation of GaAsN alloys by surface nitridation
Noriyuki Urakami, Akihiro Wakahara, Hiroto Sekiguchi, Hiroshi Okada (Toyohashi Univ. of Tech.) ED2013-20 CPM2013-5 SDM2013-27		 GaAsN alloys was grown by surface nitridation and applied for the growth of quantum well (QW). Increase of incorporation... [more] ED2013-20 CPM2013-5 SDM2013-27
pp.23-26
ED, CPM, SDM 2006-05-19
10:15		 Aichi VBL, Toyohashi University of Technology InGaPN/GaPN Quantum Well Structures for Si/III-V-N Optoelectronic Integrated Circuits
Kazuyuki Umeno, Sung Man Kim, Yuzo Furukawa, Hiroo Yonezu, Akihiro Wakahara (Toyohashi Univ. Tech.) 		Direct-transition InGaPN/GaPN quantum well (QW) structures were grown on GaP substrates by RF-MBE at 500ºC for appl... [more] ED2006-32 CPM2006-19 SDM2006-32
pp.67-72
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