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Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2012-11-16
10:00		 Tokyo Kikai-Shinko-Kaikan Bldg An Estimation of the Carrier Mobility Model Influenced by Inversion Charge Confinement for Sub-20nm MOSFETs
Masahiro Yamamoto, Akira Hiroki, Jong Chul Yoon (KIT) SDM2012-104		 An effective mobility model used in the MASTAR program, which has been used to predict the device characteristics in the... [more] SDM2012-104
pp.25-30
SDM 2011-07-04
09:00		 Aichi VBL, Nagoya Univ. High Temperature Annealing with MIPS Structure for Improving Interfacial Property at La-silicate/Si Interface and Achieving Scaled EOT
Takamasa Kawanago, Kuniyuki Kakushima, Parhat Ahmet, Kazuo Tsutsui, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, Takeo Hattori, Hiroshi Iwai (Tokyo Tech.) SDM2011-50		 This paper reports our experimental study for further EOT scaling with small interface state density based on controllin... [more] SDM2011-50
pp.1-5
SDM 2010-06-22
10:20		 Tokyo An401・402 Inst. Indus. Sci., The Univ. of Tokyo An Analysis of Electrical Carrier Mobility of Silicon Nanowire FET
Soshi Sato, Kuniyuki Kakushima, Parhat Ahmet (Tokyo Inst. of Tech.), Kenji Ohmori (Waseda Univ.), Kenji Natori, Hiroshi Iwai (Tokyo Inst. of Tech.), Keisaku Yamada (Waseda Univ.) SDM2010-35		 Silicon nanowire FET is expected to have high ION and low IOFF compared with planar FET, which results in low-power cons... [more] SDM2010-35
pp.11-16
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