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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| OME | 2019-12-20 13:00 |
Saga | avancée (Saga city) | Carbon-bridged Oligo(phenylenevinylene)s (COPV6) Single-Electron Transistor based on Electroless Au-plated (ELGP) Nanogap Electrodes Rikiya Irie, Chun Ouyang, Yuma Ito, Phan Trong Tue (Tokyo Tech), Hayato Tsuji (Kanagawa Unib), Eiichi Nakamura (Univ. Tokyo), Yutaka Majima (Tokyo Tech)  OME2019-37 |
Molecular transistors have been studied for 50 years, however electrical contacts to a single-molecule have been the iss... [more] | OME2019-37 pp.9-12 |
| ED, SDM | 2018-02-28 10:00 |
Hokkaido | Centennial Hall, Hokkaido Univ. | Electrical Characteristics of Single-Electron Transistor Made of Fe-MgF2 Single-Layer Granular Thin Films Yuki Asai, Shusaku Honjo, Takayuki Gyakushi, Atsushi Tsurumaki-Fukuchi, Masashi Arita, Yasuo Takahashi (Hokkaido Univ.) ED2017-104 SDM2017-104 |
Single-electron transistor (SET) is the expected future integrated device with very low power consumption in operation a... [more] | ED2017-104 SDM2017-104 pp.1-6 |
| SDM, ED | 2015-02-06 11:05 |
Hokkaido | Hokkaido Univ. | Fabrication and characterization of graphene single carrier transistor Takuya Iwasaki, Manoharan Muruganathan, Hiroshi Mizuta (JAIST) ED2014-150 SDM2014-159 |
In this work, we study the fabrication and the characterization of the graphene Single Carrier Transistor (SCT) with sin... [more] | ED2014-150 SDM2014-159 pp.69-73 |
| ED, SDM | 2014-02-28 12:05 |
Hokkaido | Hokkaido Univ. Centennial Hall | Formation Scheme of Nano-Scale Devices Based on Ni Nanogaps Using Field-Emission-Induced Electromigration Ryutaro Suda, Mitsuki Ito, Kohei Morihara, Takahiro Toyonaka, Kazuki Takikawa, Jun-ichi Shirakashi (Tokyo Univ. of Agr. & Tech.) ED2013-149 SDM2013-164 |
We propose a simple and easy fabrication scheme of ferromagnetic single-electron transistors (FMSETs), nanogap based res... [more] | ED2013-149 SDM2013-164 pp.95-100 |
| SDM, ED | 2013-02-28 09:00 |
Hokkaido | Hokkaido Univ. | Integration of CMOS 1-bit Analog Selector and Single-Electron Transistors Operating at Room Temperature Ryota Suzuki, Motoki Nozue, Takuya Saraya, Toshiro Hiramoto (Univ. of Tokyo) ED2012-137 SDM2012-166 |
In this paper, integrated circuit operation of CMOS analog selector circuits and silicon single-electron transistors is ... [more] | ED2012-137 SDM2012-166 pp.47-52 |
| ED, SDM | 2012-02-08 09:55 |
Hokkaido | Simultaneous Control of Series-Connected Nanogaps by Field-Emission-Induced Electromigration Mitsuki Ito, Shunsuke Akimoto, Jun-ichi Shirakashi (Tokyo Univ. of Agr. & Tech.) ED2011-151 SDM2011-168 |
We present a simple and easy technique for the simultaneous control of electrical properties of multiple Ni nanogaps. Th... [more] | ED2011-151 SDM2011-168 pp.53-58 |
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| SDM, ED | 2011-02-24 11:10 |
Hokkaido | Hokkaido Univ. | Current Intermittency in SOI-FETs under Light Illumination Arief Udhiarto, Daniel Moraru, Ryusuke Nakamura, Takeshi Mizuno, Michiharu Tabe (Shizuoka Univ.) ED2010-204 SDM2010-239 |
We investigate the effects of continuous light illumination on single-electron transport via quantum dots in silicon-on-... [more] | ED2010-204 SDM2010-239 pp.67-72 |
| ED, SDM | 2010-02-22 15:40 |
Okinawa | Okinawaken-Seinen-Kaikan | Integration of Single-Electron Transistors Using Field-Emission-Induced Electromigration Shunsuke Ueno, Yusuke Tomoda, Watari Kume, Michinobu Hanada, Kazutoshi Takiya, Jun-ichi Shirakashi (Tokyo Univ. of Agr. & Tech.) ED2009-202 SDM2009-199 |
We report a novel technique for the integration of planer-type single-electron transistors (SETs) based on nanogaps usin... [more] | ED2009-202 SDM2009-199 pp.35-39 |
| ED | 2009-04-24 09:25 |
Miyagi | Tohoku Univ. | Fabrication of a Room-temperature Operation Single Electron Transistor through Anodization Process Yasuo Kimura, Takami Muto, Michio Niwano (Tohoku Univ.) ED2009-9 |
In order to fabricate single-electron transistors which can operate at room temperature, it is necessary to arrange a se... [more] | ED2009-9 pp.35-38 |
| SDM, ED | 2009-02-27 09:00 |
Hokkaido | Hokkaido Univ. | Fabrication of single-Electron Transistors Using Field-Emission-Induced Electromigration Yusuke Tomoda, Watari Kume, Michinobu Hanada, Keisuke Takahashi, Jun-ichi Shirakashi (Tokyo Univ. of Agr. & Tech.) ED2008-232 SDM2008-224 |
We report a simple and easy technique for the fabrication of single-electron transistors (SETs) consisted of nanogaps wi... [more] | ED2008-232 SDM2008-224 pp.47-52 |
| ED, SDM | 2008-01-31 09:25 |
Hokkaido | Approaches to the high temperature operation of the carbon nanotube single electron transistor Takahiro Mori (RIKEN), Shunsuke Sato, Kazuo Omura, Katsumi Uchida, Hirofumi Yajima (TUS), Koji Ishibashi (RIKEN) ED2007-245 SDM2007-256 |
Single-walled carbon nanotubes (SWNTs) are promising candidates for the building block of the single electron transistor... [more] | ED2007-245 SDM2007-256 pp.43-46 |
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| CPM | 2007-08-09 14:30 |
Yamagata | Yamagata Univ. | [Invited Talk]
Room-temperature observation of Coulomb staircases in aluminum nanodots formed by anodization Yasuo Kimura, Michio Niwano (Tohoku Univ.) CPM2007-39 |
It is necessary to develop a hybrid technique of bottom-up and top-down processes for fabrication of room-temperature op... [more] | CPM2007-39 pp.15-19 |
| SDM, ED | 2007-02-02 13:00 |
Hokkaido | Cotunneling Current in Si Single-electron Transistor Based on Multiple Islands Kensaku Ohkura, Tetsuya Kitade, Anri Nakajima (Hiroshima Univ.) |
Single-electron transistors (SETs) are promising candidates for use as basic elements of future low-power integrated cir... [more] | ED2006-254 SDM2006-242 pp.79-82 |
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| ED, SDM | 2006-01-26 13:55 |
Hokkaido | Hokkaido Univ. | Periodic Coulomb oscillation in Si single-eletron transistor based on multiple islands Kensaku Ohkura (Hiroshima Univ.), Tetsuya Kitade (ROHM), Anri Nakajima (Hiroshima Univ.) |
Single-electron transistors (SETs) utilizing the Coulomb blockade effect are promising candidates for use as basic eleme... [more] | ED2005-225 SDM2005-237 pp.7-11 |
| ED, SDM | 2006-01-26 14:45 |
Hokkaido | Hokkaido Univ. | Room-temperature operation of an exclusive-OR circuit using a highly doped Si single-electron transistor Kensaku Ohkura (Hiroshima Univ.), Tetsuya Kitade (ROHM), Anri Nakajima (Hiroshima Univ.) |
Single-electron transistors (SETs) utilizing the Coulomb blockade effect are promising candidates for use as basic eleme... [more] | ED2005-227 SDM2005-239 pp.19-22 |
| ED, SDM | 2006-01-27 10:30 |
Hokkaido | Hokkaido Univ. | Study on switching characteristics of quantum wire transistors and single electron transistors controlled by Schottky wrap gate for ultra-low power quantum nano integrated logic circuits Seiya Kasai, Miki Yumoto, Hideki Hasegawa (Hokkaido Univ.) |
To confirm the ultra-low power consumption capability of quantum nano integrated logic circuits, such as nanoprocessors,... [more] | ED2005-234 SDM2005-246 pp.15-20 |
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