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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| SDM, ED, CPM | 2017-05-25 16:40 |
Aichi | VBL, Nagoya University | Development of plasmonic multiplexer/demultiplexer and inverter Kotaro Nakayama, Asahi Sumimura, Yuta Tonooka, Masashi Ota, Yuya Ishii, Mitsuo Fukuda (TUT)  ED2017-22 CPM2017-8 SDM2017-16 |
Optoelectronic integrated circuits using surface plasmon polaritons (SPPs) as signal carriers have been attracting atten... [more] | ED2017-22 CPM2017-8 SDM2017-16 pp.39-44 |
| CPM, LQE, ED | 2016-12-13 11:20 |
Kyoto | Kyoto University | Development of wafer structure and monolithic integrated GaN-μLED driver circuit for large-scale optoelectonic chip Kazuaki Tsuchiyama, Shu Utsuhomiya, Shota Nakagawa, Keisuke Yamane, Hiroto Sekiguchi, Hiroshi Okada, Akihiro Wakahara (Toyohashi Tech.) ED2016-73 CPM2016-106 LQE2016-89 |
A Si/SiO2/GaN-LED structure was fabricated by surface activated bonding method, and a GaN-µLED driver circuit consi... [more] | ED2016-73 CPM2016-106 LQE2016-89 pp.79-83 |
| SDM | 2016-01-28 14:00 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
CMOS photonics technologies based on heterogeneous integration on Si Mitsuru Takenaka, Younghyun Kim, Jaehoon Han, Jian Kan, Yuki Ikku, Yongpeng Cheng, Jinkwon Park, SangHyeon Kim, Shinichi Takagi (Univ. of Tokyo) SDM2015-124 |
In this paper, we present heterogeneous integration of SiGe/Ge and III-V semiconductors on Si for electronic-photonic in... [more] | SDM2015-124 pp.17-20 |
| CPM, ED, SDM | 2014-05-28 16:10 |
Aichi | Static and dynamic operations of MOSFET by propagated surface plasmon signal Hiroki Sakai, Takuma Aihara, Ayumi Takeda, Masashi Fukuhara, Masashi Ota, Yu Kimura, Yuya Ishii, Mitsuo Fukuda (Toyohashi Univ. of Tech.) ED2014-28 CPM2014-11 SDM2014-26 |
Surface plasmon polaritons (SPPs) have attracted considerable attention as a means of increasing integration density of ... [more] | ED2014-28 CPM2014-11 SDM2014-26 pp.51-54 |
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| MWP, EMT, PN, LQE, OPE, EST, IEE-EMT [detail] | 2014-01-24 17:00 |
Kyoto | Doshisha University | Static and dynamic characteristics of surface plasmon detector-MOSFET integrated circuit Takuma Aihara, Ayumi Takeda, Masashi Fukuhara, Yuya Ishii, Mitsuo Fukuda (Toyohashi Univ. of Tech.) PN2013-82 OPE2013-196 LQE2013-182 EST2013-131 MWP2013-102 |
Optical interconnections (OIs) in integrated circuits have been developed for high-speed and large-capacity date-process... [more] | PN2013-82 OPE2013-196 LQE2013-182 EST2013-131 MWP2013-102 pp.303-306 |
| LQE, LSJ | 2012-05-25 13:20 |
Fukui | Univ. of Fukui (Bunkyo Campus) | Surface plasmon polariton detector with a nano-slit grating Takuma Aihara, Kyohei Nakagawa, Masashi Fukuhara, Mitsuo Fukuda (Toyohashi Univ. of Tech) LQE2012-7 |
Surface plasmon polaritons (SPPs) are attractive as information carrier for nanoscale optoelectronic circuits because SP... [more] | LQE2012-7 pp.29-32 |
| ED, SDM, CPM | 2012-05-17 13:40 |
Aichi | VBL, Toyohashi Univ. of Technol. | Improvement in crystalline quality of GaAsN alloy by high temperature growth Futoshi Fukami, Noriyuki Urakami, Hiroto Sekiguchi, Hiroshi Okada, Akihiro Wakahara (Toyohashi Univ. Tech.) ED2012-18 CPM2012-2 SDM2012-20 |
GaAsN alloys are one of the attractive candidates for the active layers of the luminescence devices on Si. Compared with... [more] | ED2012-18 CPM2012-2 SDM2012-20 pp.7-10 |
| ED, SDM, CPM | 2012-05-17 14:05 |
Aichi | VBL, Toyohashi Univ. of Technol. | Electrical properties of n- and p-type AlGaPN for dislocation-free light-emitting devices on Si substrate Hironari Ito, Keisuke Kumagai, Hiroto Sekiguchi, Hiroshi Okada, Akihiro Wakahara (Toyohashi Univ. of Tech.) ED2012-19 CPM2012-3 SDM2012-21 |
AlGaPN alloys are expected as a cladding layer for Si based monolithic laser structure in optoelectronic integrated circ... [more] | ED2012-19 CPM2012-3 SDM2012-21 pp.11-14 |
| CPM, SDM, ED | 2011-05-19 13:50 |
Aichi | Nagoya Univ. (VBL) | Molecular beam epitaxy growth of AlGaPN alloys for optical confinement structure on Si substrate Keisuke Kumagai, Kohei Shoji, Tsuyoshi Kawai, Keisuke Yamane, Hiroto Sekiguchi, Hiroshi Okada, Akihiro Wakahara (Toyohashi Univ.Tech.) ED2011-10 CPM2011-17 SDM2011-23 |
An AlP-based dilute nitride is one of the candidates for the cladding layer of laser structure in a Si-based optoelectro... [more] | ED2011-10 CPM2011-17 SDM2011-23 pp.49-54 |
| ED, CPM, SDM | 2009-05-15 11:20 |
Aichi | Satellite Office, Toyohashi Univ. of Technology | Growth and luminescence characterization of self-assembled InGaAsN/GaPN quantum dots Noriyuki Urakami, Ryosuke Noma, Kazuyuki Umeno, Saburo Mitsuyoshi, Hiroshi Okada, Yuzo Furukawa, Akihiro Wakahara (Toyohashi Univ. of Tech.) ED2009-31 CPM2009-21 SDM2009-21 |
In order to realize dislocation-free quantum dot (QD) laser diodes on Si, we calculated the conduction band offsets of I... [more] | ED2009-31 CPM2009-21 SDM2009-21 pp.71-76 |
| ED, CPM, SDM | 2006-05-19 10:15 |
Aichi | VBL, Toyohashi University of Technology | InGaPN/GaPN Quantum Well Structures for Si/III-V-N Optoelectronic Integrated Circuits Kazuyuki Umeno, Sung Man Kim, Yuzo Furukawa, Hiroo Yonezu, Akihiro Wakahara (Toyohashi Univ. Tech.) |
Direct-transition InGaPN/GaPN quantum well (QW) structures were grown on GaP substrates by RF-MBE at 500ºC for appl... [more] | ED2006-32 CPM2006-19 SDM2006-32 pp.67-72 |
| ED, CPM, SDM | 2006-05-19 10:50 |
Aichi | VBL, Toyohashi University of Technology | Fabrication of MOSFETs and LEDs for Si/III-V-N Optoelectronic Integrated Circuits Naruto Ohta, Yuji Morisaki, Soo-Young Moon, Seigi Ishiji, Yuzo Furukawa, Hiroo Yonezu, Akihiro Wakahara (Toyohashi Univ. Tech.) |
We fabricated pMOSFETs and LEDs using lattice-matched n-Si/III-V-N layers/p-Si-substrate structures for monolithic optoe... [more] | ED2006-33 CPM2006-20 SDM2006-33 pp.73-78 |
| OCS, OPE, LQE | 2005-11-03 17:25 |
Fukuoka | 100-GHz Optoelectric Integrated Circuits using InP HBTs and a UTC-PD Norihide Kashio, Kenji Kurishima, Kimikazu Sano, Minoru Ida, Noriyuki Watanabe, Hiroyuki Fukuyama, Hirohiko Sugahara, Masami Tokumitsu, Takatomo Enoki (NTT) |
We have monolithically integrated InP HBTs and a UTC-PD by a non-selective regrowth technique. The HBT shows an ft of 26... [more] | OCS2005-56 OPE2005-86 LQE2005-94 pp.43-46 |
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