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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| SDM | 2010-12-17 15:10 |
Kyoto | Kyoto Univ. (Katsura) | Irradiation Effects of Silicon Surface by Polyatomic Ion Beams Mitsuaki Takeuchi, Hiromichi Ryuto, Gikan H. Takaoka (Kyoto Univ.)  SDM2010-197 |
C$_{3}$H$_{7}^{+}$}\ and C$_{6}$H$_{13}^{+}$\ polyatomic ion beams generated from n-octane were irradiated with 1 keV/CH... [more] | SDM2010-197 pp.69-72 |
| CPM, LQE, ED | 2010-11-12 10:25 |
Osaka | Study of etching-induced damage in p-type GaN by hard X-ray photoelectron spectroscopy Daigo Kikuta, Tetsuo Narita, Naoko Takahashi, Keita Kataoka, Yasuji Kimoto, Tsutomu Uesugi, Tetsu Kachi (Toyota CRDL, Inc.), Masahiro Sugimoto (Toyota Motor Corp.) ED2010-155 CPM2010-121 LQE2010-111 |
We carried out nondestructive measurements of the depth profile of etching-induced damage in p-GaN, in particular surfac... [more] | ED2010-155 CPM2010-121 LQE2010-111 pp.59-62 |
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| SDM | 2010-10-22 14:50 |
Miyagi | Tohoku University | Crystallographic orientation dependence of compositional transition and valence band offset at SiO2/Si interface formed using oxygen radicals Tomoyuki Suwa, Yuki Kumagai, Akinobu Teramoto, Tadahiro Ohmi, Takeo Hattori (Tohoku Univ.), Toyohiko Kinoshita, Takayuki Muro (JASRI) SDM2010-167 |
The chemical and electronic-band structures of SiO2/Si interfaces formed utilizing oxygen radicals were investigated by ... [more] | SDM2010-167 pp.61-65 |
| ED | 2010-06-17 15:50 |
Ishikawa | JAIST | Effects of surface oxidation during device processing on surface barrier height of AlGaN/GaN HFETs Masataka Higashiwaki (NICT/JST/UCSB), Srabanti Chowdhury, Brian L. Swenson, Umesh K. Mishra (UCSB) ED2010-39 |
We investigated effects of surface oxidation by annealing during device process on AlGaN surface barrier height of AlGaN... [more] | ED2010-39 pp.31-35 |
| SDM | 2009-10-30 15:45 |
Miyagi | Tohoku University | Study on compositional transition layers at SiO2/Si interface formed by radical oxidation Tomoyuki Suwa, Akinobu Teramoto, Tadahiro Ohmi, Takeo Hattori (Tohoku Univ.), Toyohiko Kinoshita, Takayuki Muro, Yukako Kato (JASRI) SDM2009-134 |
For clarifying the atomic structure of transition layer and valence band offset at Si/SiO2 interface formed by radical o... [more] | SDM2009-134 pp.77-80 |
| CPM | 2009-08-10 16:30 |
Aomori | Hirosaki Univ. | Changes in Chemical Bonding States of Diamond-Like Carbon Films by Atomic Hydrogen Irradiation Ryoichi Osozawa, Hideki Nakazawa, Tomohide Okuzaki, Naoyuki Satoh, Yoshiharu Enta (Hirosaki Univ.), Maki Suemitsu (Tohoku Univ.) CPM2009-37 |
We have deposited diamond-like carbon (DLC) films on Si substrate by pulsed laser deposition using KrF excimer laser, an... [more] | CPM2009-37 pp.19-24 |
| SDM | 2009-06-19 13:20 |
Tokyo | An401・402 Inst. Indus. Sci., The Univ. of Tokyo | Control of Interfacial Structure of High-k/Ge Gate Stack Using Radical Nitridation Kimihiko Kato, Hiroki Kondo, Mitsuo Sakashita, Shigeaki Zaima (Nagoya Univ.) SDM2009-33 |
To realize high mobility Ge channel metal-oxide-semiconductor field-effect-transistor (MOSFET), it is necessary to estab... [more] | SDM2009-33 pp.39-44 |
| SDM | 2009-06-19 16:50 |
Tokyo | An401・402 Inst. Indus. Sci., The Univ. of Tokyo | Characterization of La Diffusion into HfO2/SiO2 Stacked Layers from Ultrathin LaOx Akio Ohta, Daisuke Kanme, Seiichiro Higashi, Seiichi Miyazaki (Hiroshima Univ.) SDM2009-42 |
A stack structure consisting of ~1.3nm-thick LaOx and ~4.0nm-thick HfO2 was formed on thermally grown SiO2 on Si(100) by... [more] | SDM2009-42 pp.87-92 |
| SDM | 2009-06-19 17:00 |
Tokyo | An401・402 Inst. Indus. Sci., The Univ. of Tokyo | Characterization of Chemical Bonding Features and Electronic States at TiO2/Pt Interface Yuta Goto, Daisuke Kanme, Akio Ohta, Guobin Wei, Hideki Murakami, Seiichiro Higashi, Seiichi Miyazaki (Hiroshima University) SDM2009-44 |
We focused on the interfacial reaction between TiO2 and Pt to gain a better understanding of the mechanism of resistive ... [more] | SDM2009-44 pp.99-103 |
| OME | 2008-11-07 14:40 |
Nagano | Seiko Epson | Interface control and characteristics of organic static induction transistors Yasuyuki Watanabe (Chiba Univ.), Hiroyuki Iechi (RICOH), Fanghua Pu, Hiroshi Yamauchi, Kazuhiro Kudo (Chiba Univ.) OME2008-62 |
Controlling of interface between organic semiconductor and metal electrode is key issue to improve in the characteristic... [more] | OME2008-62 pp.23-28 |
| SDM | 2008-10-10 16:15 |
Miyagi | Tohoku Univ. | Study on Compositional Transition Layers at Gate Dielectrics/Si Interface by using Angle-resolved X-ray Photoelectron Spectroscopy Tomoyuki Suwa (Tohoku Univ.), Takashi Aratani (Shin-Etsu Chemi.), Masaaki Higuchi (Toshiba), Shigetoshi Sugawa (Tohoku Univ.), Eiji Ikenaga (JASRI), Jiro Ushio (Hitachi), Hiroshi Nohira (Musashi Inst. of Tech.), Akinobu Teramoto, Tadahiro Ohmi, Takeo Hattori (Tohoku Univ.) SDM2008-167 |
Soft x-ray-excited angle-resolved photoemission results for nitride films formed using nitrogen-hydrogen radicals on Si(... [more] | SDM2008-167 pp.69-74 |
| SDM | 2008-06-10 10:30 |
Tokyo | An401・402, Inst. Indus. Sci., The Univ. of Tokyo | Backside X-ray Photoelectron Spectroscopy of Ru/HfSiON Gate Stack
-- Origin of Change in Effective Work Function of Ru -- Taiki Mori, Akio Ohta, Hiromichi Yoshinaga, Seiichi Miyazaki (Hiroshima Univ.), Masaru Kadoshima, Yasuo Nara (Selete) SDM2008-50 |
2.5nm-thick HfSiON layers were deposited on thermally-grown SiO2 in the thickness range of 1 to 6nm or 0.7nm-thick SiON ... [more] | SDM2008-50 pp.47-52 |
| SDM | 2008-06-10 11:20 |
Tokyo | An401・402, Inst. Indus. Sci., The Univ. of Tokyo | XPS Study of TiAlN/HfSiON Gate Stack
-- Reduction of Effective Work Function Change Induced by Al Diffusion -- Akio Ohta, Taiki Mori, Hiromichi Yoshinaga, Seiichi Miyazaki (Hiroshima Univ.), Masaru Kadoshima, Yasuo Nara (Selete) SDM2008-52 |
~30nm-thick TiAlN and TiN gate were deposited on HfSiON/SiO2/Si(100) stack structure and followed by anneal at 1000º... [more] | SDM2008-52 pp.59-64 |
| SDM | 2008-06-10 12:45 |
Tokyo | An401・402, Inst. Indus. Sci., The Univ. of Tokyo | XPS real-time monitoring on the development of Si suboxides during formation of thermal oxide on Si(110) surface Yoshihisa Yamamoto, Hideaki Togashi, Atsushi Konno, Mitsutaka Matsumoto, Atsushi Kato, Eiji Saito, Maki Suemitsu (Tohoku Univ.), Yuden Teraoka, Akitaka Yoshigoe (JAEA) SDM2008-53 |
The growth process of thermal oxides on Si(110) surface and its interfacial bonding structures have been investigated by... [more] | SDM2008-53 pp.65-70 |
| SDM | 2007-06-07 14:45 |
Hiroshima | Hiroshima Univ. ( Faculty Club) | Depth Profiling of Chemical Composition and Defect State Density of SiNx Formed by Plasma CVD Masahi Miura, Akio Ohta, Hideki Murakami, Seiichiro Higashi, Seiichi Miyazaki (Hiroshima Univ.), Masayuki Kohno, Tatsuo Nishida, Toshio Nakanishi (TEL) SDM2007-34 |
The depth profiling of chemical composition and defect state density in tensile- and compressive-SiNx films formed on ch... [more] | SDM2007-34 pp.17-22 |
| SDM | 2007-06-08 11:20 |
Hiroshima | Hiroshima Univ. ( Faculty Club) | Effects of Nitrogen Incorporaton into La2O3 using Nitrogen Radicals Soshi Sato, Kiichi Tachi, Jaeyeol Song, Kuniyuki Kakushima, Parhat Ahmet, Kazuo Tsutsui, Nobuyuki Sugii, Takeo Hattori, Hiroshi Iwai (Tokyo Tech.) SDM2007-44 |
This work reports the influence of nitridation on structural and electrical properties of La2O3 gate dielectric films. T... [more] | SDM2007-44 pp.71-74 |
| SDM | 2007-06-08 14:15 |
Hiroshima | Hiroshima Univ. ( Faculty Club) | Evaluation of Thermal Stability of HfO2/SiONx/Ge(100) Stacked Structures using by Photoemission Spectroscopy Akio Ohta, Hiroshi Nakagawa, Hideki Murakami, Seiichiro Higashi, Seiichi Miyazaki (Hiroshima Univ.) SDM2007-48 |
~2.7nm-thick HfO2 films were formed by electron beam (EB) evaporation in O2 ambience on ultrathin SiONx/Ge(100) stack st... [more] | SDM2007-48 pp.91-96 |
| ED, CPM, LQE | 2006-10-05 15:45 |
Kyoto | Estimation of AlGaN/GaN HFET surface barrier height with Cat-CVD SiN passivation by XPS and C-V measurements Norio Onojima, Masataka Higashiwaki (NICT), Jun Suda, Tsunenobu Kimoto (Kyoto Univ.), Takashi Mimura (NICT/Fujitsu Lab.), Toshiaki Matsui (NICT) |
AlGaN surface barrier heights in AlGaN/GaN heterostructure field-effect transistors (HFETs) with and without SiN passiva... [more] | ED2006-158 CPM2006-95 LQE2006-62 pp.35-38 |
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| SDM | 2006-06-21 13:25 |
Hiroshima | Faculty Club, Hiroshima Univ. | Photoelectron Spectroscopy of HfO2/Ge(100) stacked structure Hiroshi Nakagawa, Akio Ohta, Hiroyuki Abe, Hideki Murakami, Seiichiro Higashi, Seiichi Miyazaki (Hiroshima Univ.) |
Ultrathin hafnium oxides (~5.4nm in thickness) evaporated on wet-chemically cleaned Ge(100) were annealed at 550ºC ... [more] | SDM2006-43 pp.7-12 |
| SDM | 2006-06-21 16:25 |
Hiroshima | Faculty Club, Hiroshima Univ. | Evaluation of Chemical Structures and Work Function of NiSi near the Interface between NiSi and SiO2 Hiromichi Yoshinaga, Daisuke Azuma, Hideki Murakami, Akio Ohta, Yuuki Munetaka, Seiichiro Higashi, Seiichi Miyazaki (Hiroshima Univ.), Takayuki Aoyama, Kimihiko Hosaka (Fujitsu Laboratories Ltd.), Kentaro Shibahara (Hiroshima Univ.) |
Impurity (Sb, P, B or As)-implanted Ni-silicides formed on thermally-grown SiO2 were characterized by Raman scattering s... [more] | SDM2006-49 pp.43-48 |
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