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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| OME, SDM | 2022-04-22 14:10 |
Miyazaki | Takachiho Hall (Primary: On-site, Secondary: Online) |
Mechanism for improving electrical properties of InGaZnOx thin-film transistors through annealing Rostislav Velichko (KUT), Yusaku Magari (Shimane Univ.), Mamoru Furuta (KUT)  SDM2022-4 OME2022-4 |
(To be available after the conference date) [more] | SDM2022-4 OME2022-4 pp.17-20 |
| OME, SDM | 2022-04-23 10:45 |
Miyazaki | Takachiho Hall (Primary: On-site, Secondary: Online) |
Direct Observation and Evaluation of In-gap States of Inorganic and Organic Semiconductors via High-sensitivity UV Photoelectron Spectroscopy Ryotaro Nakazawa, Kenta Watanabe, Yuya Tanaka, Hisao Ishii (Chiba Univ.) SDM2022-11 OME2022-11 |
The properties of devices based on inorganic and organic semiconductors are often greatly affected by in-gap states that... [more] | SDM2022-11 OME2022-11 pp.51-56 |
| ED | 2019-11-22 10:25 |
Tokyo | Spectroscopic analysis of electron emission from n-type diamond oxidized surface Tomoaki Masuzawa, Yoichiro Neo, Hidenori Mimura (Shizuoka Univ.), Ken Okano (ICU), Takatoshi Yamada (AIST) ED2019-71 |
Mechanism of electron emission was investigated for oxidized surfaces of phosphorus(P)-doped diamonds. Ultraviolet photo... [more] | ED2019-71 pp.47-49 |
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| SDM | 2019-06-21 16:45 |
Aichi | Nagoya Univ. VBL3F | Chemical Structure and Electronic States of HfSiOx/GaN(0001) Akio Ohta, Katunori Makihara (Nagoya Univ.), Toshihide Nabatame (NIMS), Koji Shiozaki, Seiichi Miyazaki (Nagoya Univ.) SDM2019-35 |
A HfSiOx layer with different Hf/(Hf+Si) composition ratio was formed on wet chemically-cleaned GaN(0001) using ALD, and... [more] | SDM2019-35 pp.47-51 |
| SDM | 2017-06-20 16:50 |
Tokyo | Campus Innovation Center Tokyo | Formation of Ultrathin Crystalline Structure of Group-IV Elements on Epitaxial Ag(111) Surface Koichi Ito, Akio Ohta, Masashi Kurosawa, Masaaki Araidai, Mitsuhisa Ikeda, Katsunori Makihara, Seiichi Miyazaki (Nagoya Univ.) SDM2017-30 |
Two dimensional (2D) honeycomb crystals such as silicene and germanene are currently receiving much attention because of... [more] | SDM2017-30 pp.43-48 |
| SDM | 2016-06-29 14:10 |
Tokyo | Campus Innovation Center Tokyo | XPS Study on Potential Change and Electrical Dipole at SiO2/Semiconductor Interface Nobuyuki Fujimura, Akio Ohta, Hiromasa Watanabe, Katsunori Makihara, Seiichi Miyazaki (Nagoya Univ.) SDM2016-40 |
An evaluation method for estimating the valence band (VB) top from the vacuum level (VL) for semiconductors and dielectr... [more] | SDM2016-40 pp.43-47 |
| SDM | 2016-06-29 15:05 |
Tokyo | Campus Innovation Center Tokyo | Effects of ultraviolet irradiation on the band offset of Tantalum nanosheets/SiO2/Si interfaces Shuhei Hayami, Satoshi Toyoda, Katsutoshi Fukuda (Kyoto Univ.), Hidetaka Sugaya (Panasonic), Masahito Morita, Akiyoshi Nakata, Yoshiharu Uchimoto, Eiichiro Matsubara (Kyoto Univ.) SDM2016-42 |
On the basis of material design for ReRAM, the interfacial band offset between insulators and Si substrate is one of the... [more] | SDM2016-42 pp.53-58 |
| SDM | 2015-06-19 11:10 |
Aichi | VBL, Nagoya Univ. | [Invited Lecture]
Characteristics of nitrogen incorporation at SiC/SiO2 interface on Si-face and C-face 4H-SiC Daisuke Mori, Kei Inoue, Hideaki Teranishi, Takayuki Hirose, Aki Takigawa (Fuji Electric) SDM2015-42 |
The chemical bonding states of Si and N at nitrided SiC/SiO2 interface were characterized by synchrotron radiation X-ray... [more] | SDM2015-42 pp.21-26 |
| SDM | 2014-10-17 10:00 |
Miyagi | Niche, Tohoku Univ. | Study on compositional transition layers at Si3N4/Si interface formed by radical nitridation Tomoyuki Suwa, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.) SDM2014-89 |
The angle-resolved Si 2p photoelectron spectra arising from the transition layers formed on the Si3N4/Si interface were ... [more] | SDM2014-89 pp.31-34 |
| SDM | 2014-10-17 10:40 |
Miyagi | Niche, Tohoku Univ. | Initial stage of oxidation on 4H-SiC by AR-XPS using angle-resolved X-ray photoelectron spectroscopy Tomoya Sasago, Shunta Yamahori, Hiroshi Nohira (Tokyo City Univ.) SDM2014-90 |
We have investigated the initial stage of oxidation on C-face 4H-SiC using angle-resolved X-ray photoelectron spectrosco... [more] | SDM2014-90 pp.35-39 |
| ED | 2014-08-01 15:50 |
Tokyo | Kikai-Shinko-Kaikan Bldg. B3-1 | Band offset at Al2O3/β-Ga2O3 Heterojunctions Takafumi Kamimura (NICT), Kohei Sasaki (Tamura Corp.), Man Hoi Wong, Daivasigamani Krishnamurthy (NICT), Akito Kuramata (Tamura Corp.), Takekazu Masui (Koha Co., Ltd.), Shigenobu Yamakoshi (Tamura Corp.), Masataka Higashiwaki (NICT) ED2014-60 |
The band alignment of Al2O3/n-Ga2O3 (010) was investigated by x-ray photoelectron spectroscopy (XPS). With a band gap of... [more] | ED2014-60 pp.41-46 |
| SDM | 2013-10-18 10:30 |
Miyagi | Niche, Tohoku Univ. | Introduction of the Bias Operation Hard X-ray Photoelectron Spectroscopy: Evaluation for Insulator/Si interface Norihiro Ikeno, Kohki Nagata (Meiji Univ.), Hiroshi Oji, Ichiro Hirosawa (JASRI), Atsushi Ogura (Meiji Univ.) SDM2013-94 |
(To be available after the conference date) [more] | SDM2013-94 pp.33-36 |
| OME | 2013-10-11 14:50 |
Osaka | Osaka Univ. Nakanoshima Center | Photoelectric emission from organic/metal interfaces studied by photoelectron spectroscopy Senku Tanaka (Kinki Univ.), Tomohiro Otani, Ichiro Hiromitsu (Shimane Univ.) OME2013-62 |
Many of organic thin films and metal films have the work function larger than 4 eV. Thus, in general, the photoelectric ... [more] | OME2013-62 pp.59-62 |
| SDM | 2012-06-21 15:05 |
Aichi | VBL, Nagoya Univ. | Detection of impurities having various chemical bonding states and their depth profiles in ultra shallow junctions Kazuo Tsutsui, Jun Kanehara, Youhei Miyata (Tokyo Tech.), Hiroshi Nohira (Tokyo City Univ.), Yudai Izumi, Takayuki Muro, Toyohiko Kinoshita (JASRI), Parhat Ahmet, Kuniyuki Kakushima, Takeo Hattori, Hiroshi Iwai (Tokyo Tech.) SDM2012-56 |
Depth profiles of impurity having different chemical bonding states were evaluated by using soft x-ray photoelectron spe... [more] | SDM2012-56 pp.69-74 |
| OME | 2012-05-24 16:15 |
Tokyo | NTT Musashino Research and Development Center | Forming of Transfer Region in The Interface Between Fluorinated Self Assembled Monolayer and Hole Transport Layer Tomoya Inden (Nagoya Univ.), Toshikazu Satoh (Toyota Central R & D Labs., Inc.), Takuya Morimoto (Nagoya Univ.), Takao Nishikawa (Iwate Univ.), Tatsuo Mori (AIT/Nagoya Univ.) OME2012-29 |
We have already reported that the introduction of fluorinated self-assembled monolayer (FSAM) leads to reduce driving vo... [more] | OME2012-29 pp.49-52 |
| SDM | 2011-10-21 09:00 |
Miyagi | Tohoku Univ. (Niche) | [Invited Talk]
Study of HfO2/Si/strained-Ge/SiGe using Angle Resolved x-ray Photoelectron Spectroscopy Hiroshi Nohira, Arata Komatsu, Kentarou Nasu, Yusuke Hoshi, Toru Kurebayashi, Kentaro Sawano (Tokyo City Univ.), M. Myronov (Univ. of Warwick), Yasuhiro Shiraki (Tokyo City Univ.) SDM2011-103 |
We have investigated the influence of Si-cap layer and the post deposition annealing (PDA) on compositional depth profil... [more] | SDM2011-103 pp.37-41 |
| SDM | 2011-07-04 10:40 |
Aichi | VBL, Nagoya Univ. | Characterization of initial oxidation process on high-index silicon surfaces by real-time photoemission spectroscopy Shinya Ohno, Kei Inoue, Masahiro Morimoto, Sadanori Arae, Hiroaki Toyoshima (Yokohama Nat'l Univ.), Akitaka Yoshigoe, Yuden Teraoka (JAEA), Shoichi Ogata (Yokohama Nat'l Univ.), Tetsuji Yasuda (AIST), Masatoshi Tanaka (Yokohama Nat'l Univ.) SDM2011-54 |
The initial oxidation on high-index silicon surfaces with (113) and (120) orientations has been investigated by real-tim... [more] | SDM2011-54 pp.23-27 |
| SDM | 2011-07-04 12:00 |
Aichi | VBL, Nagoya Univ. | Control of Interfacial Ractions in HfO2 Atomic-Layer-Deposition on Ge(100) and Post-deposition Anneal with Ultrathin TiOx Capping on Ge(100) Hideki Murakami, Tomohiro Fujioka, Akio Ohta, Kento Mishima, Seiichiro Higashi (Hiroshima Univ.), Seiichi Miyazaki (Nagoya Univ.) SDM2011-58 |
To control interfacial reaction between high-k dielectric and Ge(100) we focused on insertion of TiOx ultrathin layer wi... [more] | SDM2011-58 pp.47-50 |
| SDM | 2011-07-04 14:00 |
Aichi | VBL, Nagoya Univ. | Photoemission Study of Chemical Bonding Features at Metal/GeO2 Interfaces Masafumi Matsui, Tomohiro Fujioka, Akio Ohta, Hideki Murakami, Seiichiro Higashi (Hiroshima Univ.), Seiichi Miyazaki (Nagoya Univ.) SDM2011-61 |
We have investigated chemical bonding features at thermally-grown GeO2/Ge(100) and metals (Al, Au and Pt)/GeO2 interface... [more] | SDM2011-61 pp.63-68 |
| SDM | 2011-07-04 15:40 |
Aichi | VBL, Nagoya Univ. | Hf and La upward diffusion into TiN electrode in TiN/HfLaSiO/SiO2 gate stacks induced by high-temperature annealing and its suppression with MIPS structure Yuki Odake, Hiroaki Arimura, Masayuki Saeki, Keisuke Chikaraishi, Naomu Kitano, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe (Osaka Univ.) SDM2011-65 |
We investigated Hf and La upward diffusion in TiN/HfLaSiO/SiO2 gate stacks by means of electrical characterization and X... [more] | SDM2011-65 pp.87-92 |
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