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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| SDM | 2009-12-04 14:30 |
Nara | NAIST | Gettering in Large-Grained Thin Polycrystalline Silicon Films on Glass Substrate Akito Hara, Tsutomu Sato (Tohoku Gakuin Univ.)  SDM2009-163 |
Gettering of metal impurities in thin poly-Si films is one of the key techniques for realizing high-performance, high-re... [more] | SDM2009-163 pp.63-65 |
| CPM | 2009-10-29 14:25 |
Toyama | Toyama Prefectural University | Fabrication and evaluation of silicon solar cells by using low-purity polycrystalline silicon wafers Yuki Sano, Satoru Tsuzuki, Takuzi Umeta, Yuzuru Narita, Takahiko Suzuki, Fumihiko Hirose (Yamagata Univ.) CPM2009-90 |
(To be available after the conference date) [more] | CPM2009-90 pp.5-7 |
| SDM | 2008-10-10 15:45 |
Miyagi | Tohoku Univ. | Influence of B and P dopants on SiO2 film characteristics Satoshi Nagashima, Hiroshi Akahori (Toshiba) SDM2008-166 |
In general, the silicon material that has doped impurities such as phosphorus, boron, and arsenic to the diffusion and t... [more] | SDM2008-166 pp.63-68 |
| ICD, SDM | 2008-07-17 14:00 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Special Talk]
Present Status and Future Trend of Characteristic Variations in Scaled CMOS Toshiro Hiramoto (Univ. of Tokyo/MIRAI-Selete), Kiyoshi Takeuchi, Takaaki Tsunomura (/MIRAI-Selete), Arifin T.Putra (Univ. of Tokyo), Akio Nishida, Shiro Kamohara (/MIRAI-Selete) SDM2008-135 ICD2008-45 |
The variability is one of the most critical issues for further miniaturization of MOS transistors. Although the variabi... [more] | SDM2008-135 ICD2008-45 pp.41-46 |
| SDM | 2008-06-09 16:50 |
Tokyo | An401・402, Inst. Indus. Sci., The Univ. of Tokyo | Inversion-Layer Capacitance and Low-Field Mobility Characteristics in Si(110) pMOSFETs Masumi Saitoh, Shigeki Kobayashi, Ken Uchida (Toshiba) SDM2008-46 |
Basic transport properties of Si (110) pMOSFETs are systematically investigated. Inversion-layer capacitance of (110) p... [more] | SDM2008-46 pp.23-27 |
| ICD | 2007-04-13 13:50 |
Oita | Suppression of lateral charge redistribution using advanced impurity trap memory for improving high temperature retention Hiroshi Sunamura, Taeko Ikarashi, Ayuka Morioka, Setsu Kotsuji, Makiko Oshida, Nobuyuki Ikarashi, Shinji Fujieda, Hirohito Watanabe (NEC) ICD2007-15 |
For retention improvement in scaled SONOS-type non-volatile memory, deep traps with controllable density were formed by ... [more] | ICD2007-15 pp.83-88 |
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| CPM, EE | 2007-03-02 15:40 |
Tokyo | Kikai-Shinko-Kaikan Bldg | Design of Class DE Amplifier with Nonlinear Shunt Capacitance with Any Output Q Tooru Ezawa, Hiroo Sekiya, Jianming Lu, Takashi Yahagi (Chiba Univ.) EE2006-69 CPM2006-162 |
This paper presents design of class DE amplifier with nonlinear shunt capacitance with any output Q. It is assumed that ... [more] | EE2006-69 CPM2006-162 pp.41-46 |
| SDM, VLD | 2006-09-26 10:25 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | To be announced Yoshio Ashizawa, Hideki Oka (FUJITSU LABORATORIES) |
The density gradient approach is presented to device characteristics analysis with random dopant fluctuations. We invest... [more] | VLD2006-40 SDM2006-161 pp.7-12 |
| SDM, VLD | 2006-09-26 11:15 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Modeling of Discrete Dopant Effects on Threshold Voltage Shift by Random Telegraph Signal Ken'ichiro Sonoda, Kiyoshi Ishikawa, Takahisa Eimori, Osamu Tsuchiya (Renesas Technology Corp.) |
This paper discusses the discrete channel dopant effects on the threshold voltage shift by random telegraph signal (RTS)... [more] | VLD2006-42 SDM2006-163 pp.19-24 |
| ICD, SDM | 2005-08-19 14:40 |
Hokkaido | HAKODATE KOKUSAI HOTEL | Robust Device Design in FinFET SRAM for hp22nm Technology Node Kimitoshi Okano, Tatsuya Ishida, Takahiko Sasaki, Takashi Izumida, Masaki Kondo, Makoto Fujiwara, Nobutoshi Aoki, Satoshi Inaba, Nobuaki Otsuka, Kazunari Ishimaru, Hidemi Ishiuchi (Toshiba) |
Feasibility of FinFET SRAM operation at hp22nm technology node has been studied by device and circuit simulation from th... [more] | SDM2005-154 ICD2005-93 pp.67-72 |
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