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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| LQE, ED, CPM | 2023-11-30 14:20 |
Shizuoka | Steam Oxidation Technique for Defect Reduction on ALD-Al2O3 Insulated-gate structures Shiro Ozaki, Yusuke Kumazaki, Naoya Okamoto, Yasuhiro Nakasya, Toshihiro Tagi, Naoki Hara (Fujitsu)  ED2023-17 CPM2023-59 LQE2023-57 |
In this study, we investigated the effect of oxidant sources on carbon-related impurities in atomic layer deposited (ALD... [more] | ED2023-17 CPM2023-59 LQE2023-57 pp.15-20 |
|
| SDM | 2023-11-10 11:20 |
Tokyo | (Primary: On-site, Secondary: Online) |
[Invited Talk]
Self-Consistent Monte Carlo Device Simulation of Capture-Excitation Processes of Carriers Futo Hashimoto, Toma Suzuki, Hideki Minari, Nobuya Nakazaki, Jun Komachi (Sony Semiconductor Solutions), Nobuyuki Sano (Univ. of Tsukuba) SDM2023-69 |
The capture-excitation processes of carriers are implemented in self-consistent Monte Carlo device simulations. The car... [more] | SDM2023-69 pp.31-34 |
| SDM | 2019-11-08 10:30 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Fundamental Aspects of Semiconductor Device Modeling Associated with Discrete Impurities II
-- Random Dopants under Semiconductor Nano-structures -- Nobuyuki Sano (Univ. Tsukuba) SDM2019-75 |
Theoretical modeling of discrete impurities under the framework of device simulations plays a crucial role in analyzing ... [more] | SDM2019-75 pp.33-38 |
| SDM | 2019-06-21 14:30 |
Aichi | Nagoya Univ. VBL3F | [Invited Lecture]
Observation of three dimensional atomic arrangements of active and inactive impurities heavy doped in silicon by using photoelectron holography method Kazuo Tsutsui (Tokyo Tech), Tomohiro Matsushita (JASRI), Kotaro Natori, Tatsuhiro Ogawa (Tokyo Tech), Takayuki Muro (JASRI), Yoshitada Morikawa (Osaka Univ.), Takuya Hoshii, Kuniyuki Kakushima, Hitoshi Wakabayashi (Tokyo Tech), Kouichi Hayashi (Nagoya Inst. Tech.), Fumihiko Matsui (Inst. Molecular Science), Toyohiko Kinoshita (JASRI) SDM2019-30 |
Photoelectron holography method combined with first-principles simulations determined the local three-dimensional atomic... [more] | SDM2019-30 pp.23-27 |
| ED, THz | 2017-12-18 13:40 |
Miyagi | RIEC, Tohoku Univ | Low temperature liquid phase growth of Ge doped GaSe and GaSe1-xTex crystals for practical THz wave source Yohei Sato, Chao Tang, Tadao Tanabe, Yutaka Oyama (Tohoku Univ.) ED2017-73 |
In this study, as nonlinear optical crystal using in THz wave generation, GaSe crystal is grown by solution growth. In t... [more] | ED2017-73 pp.5-8 |
| SDM | 2017-11-09 13:30 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Impurity Diffusion Modeling in SiC Masashi Uematsu (Keio Univ.) SDM2017-64 |
SiC is an attractive material for the application of high-power electronic devices. In this article, the current status ... [more] | SDM2017-64 pp.15-20 |
| SDM | 2017-11-10 11:00 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Fundamental Aspects of Semiconductor Device Modeling associated with Discrete Impurities
-- Random Dopant Fluctuations and Self-Averaging -- Nobuyuki Sano (Univ. Tsukuba) SDM2017-68 |
The classical and quantum effects associated with discrete impurities on transport characteristics and device modeling i... [more] | SDM2017-68 pp.37-42 |
| ED | 2016-12-19 16:55 |
Miyagi | RIEC, Tohoku Univ | Liquid phase growth of GaSe crystal doped with amphoteric impurity Ge for highly efficient THz wave generation Yohei Sato, Sue Zhao, Tadao Tanabe, Kensaku Maeda, Yutaka Oyama (Tohoku Univ.) ED2016-85 |
We grow gallium selenide crystal for THz wave generator by TDM-CVP. Because GaSe crystal has high nonlinear optical cons... [more] | ED2016-85 pp.29-33 |
| SDM | 2016-10-26 14:00 |
Miyagi | Niche, Tohoku Univ. | [Invited Talk]
Controlling Metallic Contamination in Advanced ULSI Processing Koichiro Saga (Sony) SDM2016-69 |
Metal impurities dissolved in silicon can cause “recombination centers”, which degrade retention characteristics of DRAM... [more] | SDM2016-69 pp.1-8 |
| ED | 2015-12-21 16:30 |
Miyagi | RIEC, Tohoku Univ | Liquid phase growth of impurity-doped GaSe crystals for the high efficiency THz wave generation by high resistivity Kouhei Suzuki, Yohei Sato, Kensaku Maeda, Yutaka Oyama (Tohoku Univ.) ED2015-98 |
We grow layered semiconductor GaSe crystals by liquid phase epitaxy TDM-CVP for the difference frequency generation of T... [more] | ED2015-98 pp.41-46 |
| SDM | 2015-11-05 10:00 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Current Status of Impurity Diffusion Modeling in Semiconductors Masashi Uematsu (Keio Univ.) SDM2015-84 |
With the scaledown of CMOS devices, it is crucial to establish a diffusion model to accurately predict impurity diffusio... [more] | SDM2015-84 pp.1-6 |
| ED | 2014-12-23 14:35 |
Miyagi | Crystal growth of GaSe crystals for the THz generation by liquid phase epitaxy TDM-CVP and evaluation Kouhei Suzuki, Yuki Nagai, Kunihiko Yamamoto, Yohei Sato, Kensaku Maeda, Kyosuke Saito, Yutaka Oyama (Tohoku Univ.) ED2014-115 |
GaSe crystals have high birefringence(no=2.9082, ne=2.5676 @1.06μm), wide transparency(0.6~20μm), and large nonlinear op... [more] | ED2014-115 pp.97-102 |
|
| SDM | 2014-11-06 13:00 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Device simulation
-- More than 30 years in Toshiba's TCAD -- Naoyuki Shigyo (Toshiba) SDM2014-100 |
TCAD is one of important tools for designing a semiconductor device. As a virtual fabrication, TCAD contributes to reduc... [more] | SDM2014-100 pp.25-30 |
| SDM | 2013-11-15 13:00 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | NEGF Simulation for Studying Effect of Screening and Impurity Scattering in Junctionless Transistors Akiko Ueda (Univ. of Tsukuba), Mathieu Luisier (ETH Zurich), Katsuhisa Yoshida, Syuta Honda, Nobuyuki Sano (Univ. of Tsukuba) SDM2013-110 |
We examine the low field mobility in the presence of the ionized impurity scattering of highly-doped n-type junctionless... [more] | SDM2013-110 pp.61-64 |
| OME | 2013-03-05 10:35 |
Saga | AIST Kyushu Center | Effects of dark currents on the performance of photorefractive polymers Takashi Sassa, Takashi Fujihara (RIKEN) OME2012-92 |
The influence of a transient dark current on the buildup dynamics of photorefractive index gratings, which are photo-exc... [more] | OME2012-92 pp.9-12 |
| SDM | 2012-06-21 15:05 |
Aichi | VBL, Nagoya Univ. | Detection of impurities having various chemical bonding states and their depth profiles in ultra shallow junctions Kazuo Tsutsui, Jun Kanehara, Youhei Miyata (Tokyo Tech.), Hiroshi Nohira (Tokyo City Univ.), Yudai Izumi, Takayuki Muro, Toyohiko Kinoshita (JASRI), Parhat Ahmet, Kuniyuki Kakushima, Takeo Hattori, Hiroshi Iwai (Tokyo Tech.) SDM2012-56 |
Depth profiles of impurity having different chemical bonding states were evaluated by using soft x-ray photoelectron spe... [more] | SDM2012-56 pp.69-74 |
| ED, SDM | 2012-02-08 11:00 |
Hokkaido | Seebeck Coefficient of Ultrathin Si with Fermi Energy Controlled by External Bias Faiz Salleh, Kazutoshi Miwa, Hiroya Ikeda (Shizuoka Univ.) ED2011-153 SDM2011-170 |
We varied the Seebeck coefficient of an n-type silicon-on-insulator (SOI) sample by applying an external bias in order t... [more] | ED2011-153 SDM2011-170 pp.65-69 |
|
| ITE-MMS, MRIS | 2010-10-15 11:45 |
Akita | Akita Research and Development Center | [Invited Talk]
Giant spin-Hall effect in Au using an FePt perpendicular spin injector Takeshi Seki, Isamu Sugai (Tohoku Univ.), Seiji Mitani (NIMS), Koki Takanashi (Tohoku Univ.) MR2010-33 |
Generation and control of “spin current” which is the flow of spin angular momentum is a key for the development of spin... [more] | MR2010-33 pp.71-76 |
| CPM | 2010-09-10 15:00 |
Tokyo | Kikai-Shinko-Kaikan Bldg | Fabrication of Si solar cells with low-purity Si including transition metals Satoru Tsuduki, Daiki Takeda, Yuki Sano, Takahiko Suzuki, Fumihiko Hirose (Yamagata Univ.) CPM2010-87 |
Production methods of poly Si solar cells were investigated with low purity Si containing transition metals of Cu, Ni, ... [more] | CPM2010-87 pp.37-40 |
| ED, SDM | 2010-02-22 13:25 |
Okinawa | Okinawaken-Seinen-Kaikan | Seebeck coefficient in heavily-doped SOI layers Hiroya Ikeda, Faiz Salleh (Shizuoka Univ.) ED2009-197 SDM2009-194 |
We have investigated the Seebeck coefficient of Si nanostructures, especially, ultrathin P-doped SOI (silicon-on-insulat... [more] | ED2009-197 SDM2009-194 pp.5-9 |
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