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Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2011-10-20
16:10		 Miyagi Tohoku Univ. (Niche) [Special Talk] Science Based New Silicon Technologies
Tadahiro Ohmi (Tohoku Univ.) SDM2011-102		 Current Silicon Technologies can fabricate LSI only on (100) Silicon surface using two dimensional planar structure MOS ... [more] SDM2011-102
pp.27-36
SDM 2009-06-19
13:20		 Tokyo An401・402 Inst. Indus. Sci., The Univ. of Tokyo Control of Interfacial Structure of High-k/Ge Gate Stack Using Radical Nitridation
Kimihiko Kato, Hiroki Kondo, Mitsuo Sakashita, Shigeaki Zaima (Nagoya Univ.) SDM2009-33		 To realize high mobility Ge channel metal-oxide-semiconductor field-effect-transistor (MOSFET), it is necessary to estab... [more] SDM2009-33
pp.39-44
SDM 2008-10-10
16:15		 Miyagi Tohoku Univ. Study on Compositional Transition Layers at Gate Dielectrics/Si Interface by using Angle-resolved X-ray Photoelectron Spectroscopy
Tomoyuki Suwa (Tohoku Univ.), Takashi Aratani (Shin-Etsu Chemi.), Masaaki Higuchi (Toshiba), Shigetoshi Sugawa (Tohoku Univ.), Eiji Ikenaga (JASRI), Jiro Ushio (Hitachi), Hiroshi Nohira (Musashi Inst. of Tech.), Akinobu Teramoto, Tadahiro Ohmi, Takeo Hattori (Tohoku Univ.) SDM2008-167		 Soft x-ray-excited angle-resolved photoemission results for nitride films formed using nitrogen-hydrogen radicals on Si(... [more] SDM2008-167
pp.69-74
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