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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| MW | 2022-12-16 11:25 |
Mie | Jingu-Kaikan(Ise) (Primary: On-site, Secondary: Online) |
[Invited Talk]
Increasing Efficiency of Power Amplifiers for Microwave Power Transfer by PA- Antenna Co-design Shinji Hara, Noriyuki Tanba (Nagoya Univ.), Hiroshi Hirayama (Nitech)  MW2022-144 |
The efficiency is important in power amplifiers. For wireless communication applications which transfer signals, there a... [more] | MW2022-144 p.64 |
| MW, WPT | 2022-04-15 16:05 |
Tokyo | Kikai-Shinko-Kaikan Bldg. (Primary: On-site, Secondary: Online) |
[Invited Talk]
Basic Study on Dynamic Output Matching Circuit for Microwave Power Amplifier Toshio Ishizaki (Ryukoku Univ.) WPT2022-12 MW2022-12 |
When using a power amplifier for microwave heating, the output power and efficiency decrease due to load impedance fluct... [more] | WPT2022-12 MW2022-12 pp.46-51 |
| MW, ED | 2019-01-17 15:00 |
Tokyo | Hitachi, Central Research Lab. | Pit-Assisted Ohmic Contact Technology for InAlGaN/GaN HEMTs Yusuke Kumazaki, Shiro Ozaki, Yuichi Minoura, Kozo Makiyama, Toshihiro Ooki, Naoya Okamoto, Norikazu Nakamura (FUJITSU LABORATORIES LTD.) ED2018-77 MW2018-144 |
Low contact resistance was realized in InAlGaN/GaN HEMTs by the introduction of pit structures on the metal/InAlGaN inte... [more] | ED2018-77 MW2018-144 pp.51-54 |
| AP, MW (Joint) |
2018-09-20 14:55 |
Tokyo | Tokyo Tech | 300 GHz, 100 Gb/s wireless transceiver based on InP-HEMT technology Hiroshi Hamada (NTT), Takuya Fujimura, Ibrahim Abdo, Kenichi Okada (Tokyo Tech), Takuya Tsutsumi, Ho-jin Song, Hiroki Sugiyama, Hideaki Matsuzaki, Hideyuki Nosaka (NTT) MW2018-60 |
These days, wireless systems which can support the data rate of 100 Gb/s are being researched for the next generation of... [more] | MW2018-60 pp.7-12 |
| MW, ED | 2017-01-26 14:00 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Lecture]
GaN Power Transistors on Si Substrates for Switching and High-Frequency Applications Tetsuzo Ueda, Yasuhiro Uemoto, Hiroyuki Sakai, Tsuyoshi Tanaka (Panasonic), Daisuke Ueda (Kyoto Insutitute of Tech.) ED2016-96 MW2016-172 |
GaN transistors have been widely investigated for power deices to be used in various power switching systems. In additio... [more] | ED2016-96 MW2016-172 pp.1-5 |
| SAT, SANE (Joint) |
2016-02-16 15:00 |
Hiroshima | Hiroshima Institute of Technology | Evaluation of Nonlinear Phase Distortion in X-band GaAs and GaN Power Amplifiers for Small Satellite Communication and its Effect to Multi-level Modulation Masafmi Morimoto, Tomoya Fukami, Hiromi Watanabe (UTokyo), Hirobumi Saito (JAXA) SANE2015-110 |
In this paper, in order to understand AM-PM characteristics, we simulated AM-PM using equivalent circuit of FET. In addi... [more] | SANE2015-110 pp.19-24 |
| SANE | 2013-12-03 12:05 |
Overseas | VAST/VNSC(2nd Dec.) & Melia Hotel (3rd Dec), Hanoi, Vietnam | Development of the X-band High Speed Downlink Transmitter for Nano Satellite Tomoya Fukami, Hiromi Watanabe (The Univ. of Tokyo), Atsushi Tomiki (JAXA), Naohiko Iwakiri (The Univ. of Tokyo), Hirobumi Saito (JAXA), Shinichi Nakasuka (Tokyo Univ.) SANE2013-102 |
Recently small satellites start playing important roles in earth observation missions. It, however, is true that small s... [more] | SANE2013-102 pp.179-184 |
| MW | 2013-05-31 15:00 |
Kyoto | Ryukoku Univ. | A 2.1GHz-Band 20W GaN Power Amplifier with Class-F Circuit Considering Parasitic Elements Keigo Nakatani, Toshio Ishizaki (Ryukoku Univ.) MW2013-24 |
In this paper, a design method of Class-F power amplifier considering parasitic elements will be shown. Recently, many s... [more] | MW2013-24 pp.83-87 |
| SANE | 2013-04-25 13:00 |
Nagano | Usuda Deep Space Center, JAXA | Evaluation of the X-band High Speed Downlink Transmitter with GaN-HEMT amplifier for Nano Satellite Tomoya Fukami, Hiromi Watanabe (Univ. of Tokyo), Atsushi Tomiki (JAXA), Naohiko Iwakiri (Univ. of Tokyo), Hirobumi Saito (JAXA), Shinichi Nakasuka (Univ. of Tokyo) SANE2013-1 |
Recently small satellites start playing important roles in earth observation missions. It, however, is true that small s... [more] | SANE2013-1 pp.1-6 |
| ED | 2012-12-17 13:25 |
Miyagi | Tohoku University | 77 GHz-band High Power Amplifier Module using Redistribution Layer Technology Masaru Sato, Yoshikatsu Ishizuki, Shinya Sasaki, Hiroshi Matsumura, Toshihide Suzuki, Motoaki Tani (Fujitsu Lab.) ED2012-94 |
We have developed a new packaging technology that enables the millimeter-wave power amplifier that can be employed in ap... [more] | ED2012-94 pp.7-10 |
| ICD | 2012-12-18 14:20 |
Tokyo | Tokyo Tech Front | High Efficiency 315MHz Transmitter with Dual Supply Voltage Scheme Shunta Iguchi (Univ. of Tokyo), Akira Saito, Kazunori Watanabe (STARC), Takayasu Sakurai, Makoto Takamiya (Univ. of Tokyo) ICD2012-119 |
Dual power supply voltage (VDD) scheme is proposed to increase the efficiency of a power amplifier (PA) with small outpu... [more] | ICD2012-119 pp.121-126 |
| SANE | 2012-10-11 14:40 |
Overseas | The SONGDO CONVENSIA, Incheon Korea | Developments of high-efficiency GaN RF amplifier and pre-distortion technique for nano/small satellite downlink system Hiromi Watanabe, Tomoya Fukami (Univ. of Tokyo), Atsushi Tomiki, Hirobumi Saito, Naohiko Iwakiri (JAXA) SANE2012-83 |
A high-speed downlink communication system is required to meet different applications for nano/small satellites. Therefo... [more] | SANE2012-83 pp.153-158 |
| RCS, SIP | 2010-01-21 09:40 |
Fukuoka | Kyushu Univ. | Simulation and Experimental Evaluation of Nonlinear Distortion on OFDM Systems with Clipping and Filtering Taewoo Lee, Hideki Ochiai (Yokohama National Univ.) SIP2009-73 RCS2009-207 |
An OFDM system has a high spectrum efficiency due to its near rectangular power spectrum shape, and also has a strong ro... [more] | SIP2009-73 RCS2009-207 pp.1-5 |
| RCS | 2009-06-25 14:00 |
Aichi | Nagoya University | Analysis of Non-linear Distortion by Power Amplifier in 2.4GHz Wireless Communication System Taewoo Lee, Hideki Ochiai (Yokohama National Univ.) RCS2009-30 |
Orthogonal frequency division multiplexing (OFDM) has several advantages such as high bandwidth efficiency and strong im... [more] | RCS2009-30 pp.17-20 |
| SDM, ED | 2009-06-24 14:00 |
Overseas | Haeundae Grand Hotel, Busan, Korea | [Invited Talk]
CMOS-based Power Amplifiers Operating at Quasi-Millimeter and Millimeter Waveband Toshihide Suzuki, Yoichi Kawano (Fujitsu/Fujitsu Labs.), Masaru Sato (Fujitsu Labs.), Yasuhiro Nakasha, Tatsuya Hirose (Fujitsu/Fujitsu Labs.), Naoki Hara (Fujitsu Labs.), Kazukiyo Joshin (Fujitsu/Fujitsu Labs.) ED2009-50 SDM2009-45 |
This paper presents quasi-millimeter and millimeter power amplifiers (PA) fabricated in a standard 90-nm CMOS process. A... [more] | ED2009-50 SDM2009-45 pp.1-4 |
| EE | 2009-02-12 11:40 |
Overseas | Industrial Technology Research Institute | Architecture of Wideband High-Efficiency Envelope Tracking Power Amplifier for Base Station Masato Kaneta, Akihiro Kanbe, Fuminori Yui, Haruo Kobayashi (Gunma Univ.), Hitoshi Hirata, Tatsuhiro Shimura, Kentarou Yamagishi (Sumitomo Electric) EE2008-68 |
This paper proposes a new architecture for envelope-tracking power supplies for base stations. The proposed multiphase D... [more] | EE2008-68 pp.31-36 |
| MW, EMCJ | 2008-10-23 16:45 |
Yamagata | Yamagata Univ. | Millimeter-Wave Power Amplifiers in 90nm CMOS Toshihide Suzuki, Yoichi Kawano, Masaru Sato, Tatsuya Hirose, Naoki Hara, Kazukiyo Joshin (FJ Lab.) EMCJ2008-67 MW2008-111 |
This paper introduces millimeter-wave band power amplifiers (PAs) using standard 90nm CMOS technology. By developing an ... [more] | EMCJ2008-67 MW2008-111 pp.47-51 |
| ED, MW | 2008-01-16 14:25 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | GaN HEMT Doherty Amplifiers for W-CDMA and WiMAX Base Station Applications Hiroaki Sano, Norihiko Ui, Seigo Sano (Eudyna Devices) ED2007-209 MW2007-140 |
Two types of Doherty amplifiers for mobile communication base stations have been developed using GaN HEMTs biased at dra... [more] | ED2007-209 MW2007-140 pp.17-22 |
| ED, MW | 2008-01-17 09:45 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Examination of dual band CMOS RF power amplifier circuit Jun Kikuchi (Gunma Univ.), Hisayasu Sato (Renesas Technology Corporation), Noboru Ishihara (Gunma Univ.) ED2007-214 MW2007-145 |
Dual-band CMOS RF power amplifier circuit design techniques have been studied. In CMOS power amplifier design with low p... [more] | ED2007-214 MW2007-145 pp.45-50 |
| RCS, MoNA, WBS, SR, MW (Joint) |
2007-03-09 17:10 |
Kanagawa | YRP | Research and Standardization activty for IEEE802.15.3c mmW WPAN
-- (7) millimeter-wave RF front-end for IEEE 802.15.3c -- Chang-Soon Choi, Yozo Shoji, Hiroshi Harada, Ryuhei Funada, Hirokazu Sawada, Shuzo Kato (NICT), Kenichi Maruhashi (NEC), Ichihiko Toyoda (NTT), Kazuaki Takahashi, Yoshio Aoki (Matsushita), Kazufumi Igarashi (JRC), Tsukasa Yoneyama (MMEX), Kenjiro Nishikawa (NTT), Mitsuyuki Yamauchi (TAIYOYUDEN), Hiroyuki Nakase (Tohoku Univ) RCS2006-284 |
We present behavioral models of millimeter-wave power amplifiers and phase-locked oscillators for the evaluation of stan... [more] | RCS2006-284 pp.199-202 |
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