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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| US, EA (Joint) |
2018-01-23 13:00 |
Osaka | [Poster Presentation]
Ultrasonic Propagation controlled by Phononic Crystals and its Optical Visualization Kensuke Manabe, Atsushi Ishikawa, Takefumi Kanda, Kenji Tsuruta (Okayama Univ.)  US2017-95 |
(To be available after the conference date) [more] | US2017-95 pp.67-69 |
|
| SDM, OME | 2016-04-08 14:20 |
Okinawa | Okinawa Prefectural Museum & Art Museum | [Invited Talk]
Growth and characterization of Sn-containing group-IV semiconductor thin film Yosuke Shimura (Sizuoka Univ.), Wakana Takeuchi, Mitsuo Sakashita, Masashi Kurosawa, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) SDM2016-5 OME2016-5 |
Strain and energy band structure can be designed in Sn-containing group-IV semiconductor alloys. Moreover, as these new ... [more] | SDM2016-5 OME2016-5 pp.23-26 |
| OME | 2013-10-11 11:20 |
Osaka | Osaka Univ. Nakanoshima Center | Finite-Difference Time-Domain Analysis of Optical Properties of Cholesteric Blue Phase Liquid Crystal Yasuhiro Ogawa, Hiroyuki Yoshida, Masanori Ozaki (Osaka univ.) OME2013-55 |
Cholesteric blue phases are liquid crystal phases that spontaneously form three-dimensionally periodic helical structure... [more] | OME2013-55 pp.23-26 |
| ED, LQE, CPM | 2012-11-30 14:30 |
Osaka | Osaka City University | Analysis of band structure and Auger recombination process in wurtzite InGaN Gen-ichi Hatakoshi, Shinya Nunoue (Toshiba) ED2012-86 CPM2012-143 LQE2012-114 |
A characteristic feature of the wurtzite semiconductor is the existence of a higher conduction band having the energy di... [more] | ED2012-86 CPM2012-143 LQE2012-114 pp.97-101 |
| ED | 2011-07-30 12:05 |
Niigata | Multimedia system center, Nagaoka Univ. of Tech. | Quantum-Corrected Monte Carlo Analysis of Strained InAs HEMTs Jun Sato, Fumiharu Machida, Shinsuke Hara, Hiroki I. Fujishiro (TUS) ED2011-53 |
Because of their extremely high electron mobility, InAs and related materials have attracted much attention as promising... [more] | ED2011-53 pp.79-84 |
| ED, LQE, CPM | 2009-11-19 14:20 |
Tokushima | Univ. of Tokushima (Josanjima Campus, Kogyo-Kaikan) | Theoretical Studies on the Characteristic Electronic Structures of In-Containint Nitride Seimiconductors Based of the First Principles Calculations Kenji Shiraishi, Jun-ichi Iwata (Univ. of Tsukuba/JST), Teruaki Obata (Univ. of Tsukuba), Atsushi Oshiyama (Univ. of Tokyo/JST) ED2009-138 CPM2009-112 LQE2009-117 |
In-containing nitride semiconductors exhibit characteristic behavior which can be ascribed to the large difference in th... [more] | ED2009-138 CPM2009-112 LQE2009-117 pp.47-50 |
| SDM, ED | 2009-06-24 14:30 |
Overseas | Haeundae Grand Hotel, Busan, Korea | [Invited Talk]
Theoretical study on graphene field-effect transistors Eiichi Sano (Hokkaido Univ./JST), Taiichi Otsuji (Tohoku Univ../JST) ED2009-62 SDM2009-57 |
Graphene is one of the most attractive materials for“beyond CMOS” electronics. We investigate graphene-layer composition... [more] | ED2009-62 SDM2009-57 pp.53-58 |
| ED | 2009-06-12 09:30 |
Tokyo | Theoretical Study of Band Structures and Electron Transport properties in Strained InAs and InSb Hiroyuki Nishino, Ichita Kawahira, Shinsuke Hara, Hiroki I. Fujishiro (Tokyo Univ. of Sci.) ED2009-44 |
Narrow band gap semiconductors such as InAs and InSb have been attracted much attention as possible channel materials to... [more] | ED2009-44 pp.41-46 |
|
| CAS, NLP | 2005-09-16 16:15 |
Niigata | Nagaoka Univ. of Technology | A Study on the Band Structure of Modulated Superlattice Based on the Circuit Theory Kunihiko Asakura (Yonago National College of Tech.), Osamu Ogurisu (Kanazawa Univ.), Hirofumi Sanada (Hokkaido Inst. of Tech.), Masakiyo Suzuki (Kitami Inst. of Tech.) |
This paper presents that layer width modulated superlattices have a band structure which essentially consists of three k... [more] | CAS2005-46 NLP2005-59 pp.73-77 |
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