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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 6 of 6  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2019-06-21
14:30
Aichi Nagoya Univ. VBL3F [Invited Lecture] Observation of three dimensional atomic arrangements of active and inactive impurities heavy doped in silicon by using photoelectron holography method
Kazuo Tsutsui (Tokyo Tech), Tomohiro Matsushita (JASRI), Kotaro Natori, Tatsuhiro Ogawa (Tokyo Tech), Takayuki Muro (JASRI), Yoshitada Morikawa (Osaka Univ.), Takuya Hoshii, Kuniyuki Kakushima, Hitoshi Wakabayashi (Tokyo Tech), Kouichi Hayashi (Nagoya Inst. Tech.), Fumihiko Matsui (Inst. Molecular Science), Toyohiko Kinoshita (JASRI) SDM2019-30
Photoelectron holography method combined with first-principles simulations determined the local three-dimensional atomic... [more] SDM2019-30
pp.23-27
SDM 2016-11-11
14:30
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Application of DFT Calculation for the Development of High Quality Si and Ge Substrates -- From Ultra Large Diameter Crystal Pulling to Metal Gettering --
Koji Sueoka (Okayama Pref. Univ.) SDM2016-87
During the last decade, considerable progress has been made in understanding the properties and behavior of the vacancy ... [more] SDM2016-87
pp.49-54
SDM 2014-11-07
10:50
Tokyo Kikai-Shinko-Kaikan Bldg. Stress and Doping Impact on Intrinsic Point Defect Behaviour in Growing Single Crystal Silicon
Koji Sueoka, Eiji Kamiyama, Kozo Nakamura (Okayama Pref. Univ.), Jan Vanhellemont (Ghent Univ.) SDM2014-104
For the mass-production of 450 mm-diameter defect-free Si crystals, one has to take into account the impact of thermal s... [more] SDM2014-104
pp.47-52
SDM 2008-10-10
15:45
Miyagi Tohoku Univ. Influence of B and P dopants on SiO2 film characteristics
Satoshi Nagashima, Hiroshi Akahori (Toshiba) SDM2008-166
In general, the silicon material that has doped impurities such as phosphorus, boron, and arsenic to the diffusion and t... [more] SDM2008-166
pp.63-68
ED, OME 2007-09-21
13:50
Fukuoka Kyushu Institute of Technology Electrochemical stretching of plypyrrole film doped the novel dopant
Yoshikazu Kato, Wataru Takashima, Keiichi Kaneto (kyusyu inst. tech.) ED2007-151 OME2007-38
Conducting polymer, polypyrrole (PPy), is well known to show various electrochemomechanical deforming (ECMD) behaviors w... [more] ED2007-151 OME2007-38
pp.41-44
ED, SDM 2007-06-25
13:00
Overseas Commodore Hotel Gyeongju Chosun, Gyeongju, Korea [Invited Talk] Si single-electron FETs for single-photon detection
Michiharu Tabe, Ratno Nuryadi, Zainal Burhanudin (Shizuoka Univ.)
We have studied three research aspects as key technologies for breakthrough in Si devices, i.e., time-controlled transfe... [more]
 Results 1 - 6 of 6  /   
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