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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| OME | 2024-01-16 15:30 |
Online | Online | Characterization of inverse structure OLED devices with n-type doped electron transport layer Kakeru Miyazaki, Masahiro Morimoto, Shigeki Naka (Univ. of toyama)  OME2023-81 |
Organic semiconductors have extremely low carrier density and are classified as insulators in terms of conductivity. n-t... [more] | OME2023-81 pp.18-21 |
| SDM | 2023-10-13 16:00 |
Miyagi | Niche, Tohoku Univ. | Excimer laser annealing method with the controlled grain size of poly-Si films and TFT characteristics Shu Nishida, Keita Katayama, Daisuke Nakamura (Kyushu Univ.), Tetsuya Goto (Tohoku Univ.), Hiroshi Ikenoue (Kochi Univ. of Technology) SDM2023-58 |
In recent years, Thin ｆilm ｔransistors have been widely used as switching devices in flat panel displays, such as liquid... [more] | SDM2023-58 pp.27-33 |
| SDM, ICD, ITE-IST [detail] | 2023-08-01 16:10 |
Hokkaido | Hokkaido Univ. Multimedia Education Bldg. 3F (Primary: On-site, Secondary: Online) |
Additional High-Pressure Hydrogen Annealing Improves the Cryogenic Operation of Si (110)-oriented n-MOSFETs Shunsuke Shitakata (Keio Univ./AIST), Hiroshi Oka, Takumi Inaba, Shota Iizuka, Kimihiko Kato, Takahiro Mori (AIST) SDM2023-41 ICD2023-20 |
Cryo-CMOS technology is highly demanded to realize control circuits of large-scale quantum computers, which control and ... [more] | SDM2023-41 ICD2023-20 pp.28-31 |
| SDM, OME | 2021-04-23 14:20 |
Okinawa | Okinawaken Seinen Kaikan (Primary: On-site, Secondary: Online) |
Issue of crystallization for LTPS TFT Noguchi Takashi, OkadaTatsuya (Univ. Ryukyus) SDM2021-3 OME2021-3 |
Abstract Currently, poly Si TFTs are mounted on glass and are adopted for display panel s such as smart-phone, elect... [more] |
SDM2021-3 OME2021-3 pp.13-14 |
| LQE, CPM, ED | 2020-11-27 13:00 |
Online | Online | Optimization of lateral Mg activation in LEDs with GaN tunnel junctions Mikiko Tasaki, Kazuki Kiyohara, Mahito Odawara, Taichi Ito, Tetsuya Takeuchi, Satoshi Kamiyama, Motoaki Iwaya (Meijo Univ.), Isamu Akasaki (Nagoya Univ.) ED2020-18 CPM2020-39 LQE2020-69 |
Current confinement structures with GaN tunnel junctions have been utilized in LEDs and laser diodes. In such devices, a... [more] | ED2020-18 CPM2020-39 LQE2020-69 pp.67-70 |
| LQE, CPM, ED | 2020-11-27 14:30 |
Online | Online | Crystalline Quality Improvement of Sputtered h-BN on Sapphire by High-Temperature Annealing Ryoji Kataoka, Haruhiko Koizumi, Sho Iwayama, Hideto Miyake (Mie Univ.) ED2020-22 CPM2020-43 LQE2020-73 |
Hexagonal boron nitride(h-BN) is a two-dimensional layered materials and is expected to functions as a strain relaxation... [more] | ED2020-22 CPM2020-43 LQE2020-73 pp.83-86 |
| SDM, OME | 2020-04-13 14:50 |
Okinawa | Okinawaken Seinen Kaikan (Cancelled, technical report was not issued) |
Issues for crystallization of SI films Noguchi Takashi, Okada Tatsuya (Univ. Ryukyus) |
(To be available after the conference date) [more] | |
| EID, ITE-IDY, IEIJ-SSL, SID-JC, IEE-EDD [detail] | 2020-01-23 15:15 |
Tottori | Tottori Univ. | [Invited Lecture]
Surface Treatment using Atomic Hydrogen for Semiconductor Process Akira Heya (Univ. of Hyogo) |
To realize flexible displays and sheet computers, we have tried to develop the novel surface treatment, named Atomic Hyd... [more] | |
| CPM | 2019-11-07 15:00 |
Fukui | Fukui univ. | Annealing effects on the properties of nitrogen doped DLC films Hiroya Osanai, Kazuki Nakamura, Haruto Koriyama, Yasuyuki Kobayashi, Yoshiharu Enta, Yushi Suzuki (Hirosaki Univ.), Maki Suemitsu (Tohoku Univ.), Hideki Nakazawa (Hirosaki Univ.) CPM2019-46 |
We have prepared nitrogen doped diamond-like carbon (N-DLC) films by plasma-enhanced chemical vapor deposition using H2 ... [more] | CPM2019-46 pp.9-14 |
| MW, ED | 2019-01-17 15:25 |
Tokyo | Hitachi, Central Research Lab. | ED2018-78 MW2018-145 |
(To be available after the conference date) [more] | ED2018-78 MW2018-145 pp.55-58 |
| EID, SDM, ITE-IDY [detail] | 2018-12-25 13:15 |
Kyoto | Effects of SiOx Capping Film on Crystallization of Ge Film for Flash Lamp Annealing (Ⅱ) Yoshiki akita, Naoto Matsuo (Univ. of Hyogo), Kazuyuki Kohama, Kazuhiro Ito (Osaka Univ.) EID2018-5 SDM2018-78 |
We examined the effect of SiOx capping film on Ge films in FLA. The crystallinity was different between SPC and LPC. At ... [more] | EID2018-5 SDM2018-78 pp.17-20 |
|
| ED, LQE, CPM | 2018-11-30 11:15 |
Aichi | Nagoya Inst. tech. | Fabrication and evaluation of p-type Cu-AlOx thin film by photochemical deposition method Masanari Umemura, Masaya Ichimura (Nagoya Inst. Tech.) ED2018-46 CPM2018-80 LQE2018-100 |
AlOx has many physical properties suitable for electronic devices such as wide bandgap and high dielectric breakdown ele... [more] | ED2018-46 CPM2018-80 LQE2018-100 pp.65-70 |
| CPM, IEE-MAG | 2018-11-02 14:25 |
Niigata | Machinaka campus Nagaoka | Thermal stability of silicon and nitrogen doped DLC thin films Hideki Nakazawa, Kazuki Nakamura, Hiroya Osanai, Haruto Koriyama, Yasuyuki Kobayashi, Yoshiharu Enta, Yushi Suzuki (Hirosaki Univ.), Maki Suemitsu (Tohoku Univ.) CPM2018-52 |
We have investigated the effects of post-annealing on the properties of silicon and nitrogen doped diamond-like carbon (... [more] | CPM2018-52 pp.99-104 |
| LQE, CPM, ED | 2017-12-01 14:45 |
Aichi | Nagoya Inst. tech. | Homoepitaxial growth on sputtered AlN templates by MOVPE Ryo Yoshizawa, Yusuke Hayashi, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.) ED2017-66 CPM2017-109 LQE2017-79 |
AlN is a wide band gap semiconductor and has attracted attention as a material for deep UV light device because its ther... [more] | ED2017-66 CPM2017-109 LQE2017-79 pp.83-86 |
| ED, LQE, CPM | 2015-11-26 10:55 |
Osaka | Osaka City University Media Center | Growth of AlN with annealing on different misoriented c-plane sapphire Shuhei Suzuki, Chia-Hung Lin, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.), Hiroyuki Fukuyama (Tohoku Univ.) ED2015-69 CPM2015-104 LQE2015-101 |
AlN is promising for applications in the deep ultraviolet region because of its wide direct band-gap and excellent therm... [more] | ED2015-69 CPM2015-104 LQE2015-101 pp.5-9 |
| ED | 2015-07-24 15:35 |
Ishikawa | IT Business Plaza Musashi 5F | Electrical properties of SiC MOSFETs with various substrate impurity concentrations Hiroshi Yano (NAIST/Univ. Tsukuba), Hiroto Yuki, Takashi Fuyuki (NAIST) ED2015-41 |
We have investigated electrical properties of n-channel MOSFETs fabricated on Si-face 4H-SiC with various substrate impu... [more] | ED2015-41 pp.25-29 |
| MRIS, ITE-MMS | 2015-06-05 11:25 |
Miyagi | Tohoku Univ. | Effect of post-annealing on magnetic properties and microstructures of CoPt- based granular media Kim Kong Tham (TKK), Shintaro Hinata, Shin Saito (Tohoku Univ.) MR2015-10 |
Magnetic properties and microstructure of Co80Pt20−30 vol.% (Al2O3, TiO2, WO3) and Co82.4Pt17.6−27.7 vol.% S... [more] | MR2015-10 pp.61-65 |
| OME, SDM | 2015-04-30 10:40 |
Okinawa | Oh-hama Nobumoto Memorial Hall | Lateral solid-phase crystallization of a-GeSn on insulator for next generation flexible electronics Ryo Matsumura (Kyushu Univ./ JSPS), Hironori Chikita, Yuki Kai, Masaya Sasaki, Taizoh Sadoh, Hiroshi Ikenoue, Masanobu Miyao (Kyushu Univ.) SDM2015-10 OME2015-10 |
In order to realize next generation flexible electronics, high carrier mobility materials, such as GeSn, has to be cryst... [more] | SDM2015-10 OME2015-10 pp.39-40 |
| SDM, EID | 2014-12-12 11:00 |
Kyoto | Kyoto University | Irradiation Effect of Carbon-Based Polyatomic Ions on Si Substrate Mitsuaki Takeuchi, Kyohei Hayashi, Hiromichi Ryuto, Gikan H. Takaoka (Kyoto Univ.), Tsutomu Nagayama, Koji Matsuda (Nissin Ion Equipment) EID2014-17 SDM2014-112 |
Irradiation damage on Si(100) substrates which were irradiated with C$_{n}$H$_{n}^{+}$($n$=3, 7, 14) and C$_{n}$H$_{2n+1... [more] | EID2014-17 SDM2014-112 pp.21-24 |
| SDM, EID | 2014-12-12 14:15 |
Kyoto | Kyoto University | Crystallization of Germanium Film with (111) Orientation on Amorphous Substrate by Laser Annealing Toru Takao, Masahiro Horita, Yasuaki Ishikawa, Yukiharu Uraoka (NAIST) EID2014-26 SDM2014-121 |
Single-grain Germanium (Ge) on amorphous substrate is required to realize the flexible system on panel display. Stripe-p... [more] | EID2014-26 SDM2014-121 pp.67-71 |
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