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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
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Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2015-01-27
15:55		 Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] 16 nm FinFET High-k/Metal-gate 256-kbit 6T SRAM Macros with Wordline Overdriven Assist
Makoto Yabuuchi, Masao Morimoto, Yasumasa Tsukamoto, Shinji Tanaka, Koji Tanaka, Miki Tanaka, Koji Nii (Renesas) SDM2014-144		 We demonstrate 16 nm FinFET High-k/Metal-gate SRAM macros with a wordline (WL) overdriven read/write-assist circuit. Tes... [more] SDM2014-144
pp.37-40
ICD 2012-12-18
13:30		 Tokyo Tokyo Tech Front [Invited Talk] CMOS analog mixed circuit and its applications
Shouhei Kousai (Toshiba) ICD2012-118		 Recent CMOS Analog VLSI has evolved with CMOS Digital circuits and has been enabled various and ubiquitous applications.... [more] ICD2012-118
pp.115-120
ICD 2010-04-22
10:50		 Kanagawa Shonan Institute of Tech. A 45nm 0.6V Cross-Point 8T SRAM with Negative Biased Read/Write Assist
Makoto Yabuuchi, Koji Nii, Yasumasa Tsukamoto, Yasunobu Nakase, Hirofumi Shinohara (Renesas Electronics) ICD2010-3		 We propose a new design solution for embedded SRAM macros with cross point 8T-SRAM for low operating voltage and power. ... [more] ICD2010-3
pp.13-16
SDM [detail] 2008-11-14
13:50		 Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] [Invited]Robust Design of Embedded SRAM on Deep-submicron Technology
Koji Nii, Makoto Yabuuchi, Yasumasa Tsukamoto, Shigeki Ohbayashi, Hirofumi Shinohara (Renesas Technology Corp.) SDM2008-178		 We develop high-density SRAM module in deep-submicron CMOS technology with the variation tolerant assist circuits agains... [more] SDM2008-178
pp.55-60
ICD, SDM 2008-07-17
10:30		 Tokyo Kikai-Shinko-Kaikan Bldg. A 45 nm Low-Standby-Power Embedded SRAM with Improved Immunity Against Process and Temperature Variations
Makoto Yabuuchi, Koji Nii, Yasumasa Tsukamoto, Shigeki Ohbayashi, Susumu Imaoka (Renesas Tech.), Yoshinobu Yamagami, Satoshi Ishikura, Toshio Terano, Katsuji Satomi, Hironori Akamatsu (Matsushita Elec.), Hirofumi Shinohara (Renesas Tech.) SDM2008-131 ICD2008-41		 We develop 512 Kb SRAM module in 45 nm LSTP CMOS technology with the variation tolerant assist circuits against process ... [more] SDM2008-131 ICD2008-41
pp.17-22
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