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Committee Date Time Place Paper Title / Authors Abstract Paper #
SIP, CAS, VLD 2009-07-02
Hokkaido Kushiko-shi Shogai Gakushu Center Measured Data Evaluations for Both Behaviors of MOSFET and Lateral BJT Based on High Breakdown Voltage SOI-CMOS Process using Asymmetric LDD structure
Takashi Hamahata (Kinki Univ.), Toshiaki Koike-Akino (Harvard Univ.), Toshiro Akino, T. Goji Etoh (Kinki Univ.) CAS2009-19 VLD2009-24 SIP2009-36
This paper describes that, being based on 0.6um SOI-CMOS process of X-FAB having an MOSFET structure with a high breakdo... [more] CAS2009-19 VLD2009-24 SIP2009-36
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