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Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2018-06-25
13:30
Aichi Nagoya Univ. VBL3F [Invited Lecture] Inversion channel diamond MOSFET -- Formation of diamond MOS interface by wet annealing --
Tsubasa Matsumoto (Kanazawa Univ.), Hiromitsu Kato, Toshiharu Makino, Masahiko Ogura, Daisuke Takeuchi (AIST), Takao Inokuma (Kanazawa Univ.), Satoshi Yamasaki (AIST), Norio Tokuda (Kanazawa Univ.) SDM2018-20
We fabricated inversion channel diamond MOSFET with normally off characteristics. The diamond MOSFET with the inversion ... [more] SDM2018-20
pp.19-22
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