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Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2014-06-19
11:05		 Aichi VBL, Nagoya Univ. Control of Stacking Fault Structures in Ge1-xSnx Epitaxial Growth
Takanori Asano (Nagoya Univ.), Noriyuki Taoka (IHP Microelectronics), Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) SDM2014-47		 Ge or Ge1－xSnx layer with (110) surface has attracted much attentions for Ge multi-gate MOS transistors. For forming a h... [more] SDM2014-47
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