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Committee Date Time Place Paper Title / Authors Abstract Paper #
ED, SDM, CPM 2012-05-17
14:30		 Aichi VBL, Toyohashi Univ. of Technol. Polarization properties in InGaN/GaN multiple quantum well on semipolar (1-101)GaN/Si
Maki Kushimoto, Tomoyuki Tanikawa, Yoshio Honda, Masahito Yamaguchi, Hiroshi Amano (Nagoya Univ.) ED2012-20 CPM2012-4 SDM2012-22		 We grew High-quality semipolar (1-101) GaN stripes on a Si substrate through Selective area growth (SAG) and regrow InGa... [more] ED2012-20 CPM2012-4 SDM2012-22
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