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Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2008-06-09
16:50
Tokyo An401・402, Inst. Indus. Sci., The Univ. of Tokyo Inversion-Layer Capacitance and Low-Field Mobility Characteristics in Si(110) pMOSFETs
Masumi Saitoh, Shigeki Kobayashi, Ken Uchida (Toshiba) SDM2008-46
Basic transport properties of Si (110) pMOSFETs are systematically investigated. Inversion-layer capacitance of (110) p... [more] SDM2008-46
pp.23-27
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