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Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2008-12-05
13:50		 Kyoto Kyoto University, Katsura Campus, A1-001 Electrical Properties of Bio-Nano-Dot Floating-gate MOSFETs with Ultra-thin Tunnel Oxide
Hiroyuki Irifune, Hiroshi Yano, Yukiharu Uraoka, Takashi Fuyuki, Ichiro Yamashita (Nara Institute ofScience and Tecnology) SDM2008-189		 So far, we have already developed floating gate memory devices using bio-nano-dot (BND). In this study, we fabricated an... [more] SDM2008-189
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