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Abstract
Paper #
ICD
,
SDM
2005-08-19
10:00
Hokkaido
HAKODATE KOKUSAI HOTEL
[Special Invited Talk] HfSiON -- its high applicability as the alternative gate dielectric based on the high thermal stability and the remaining issue --
Akira Nishiyama
,
Masato Koyama
,
Yuuichi Kamimuta
,
Masahiro Koike
,
Ryosuke Iijima
,
Takeshi Yamaguchi
,
Masamichi Suzuki
,
Tsunehiro Ino
,
Mizuki Ono
(
Toshiba
)
The decrease in the MOS device size has long been requiring the thinning of its gate dielectrics. In order to suppress t...
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SDM2005-146
ICD2005-85
pp.19-24
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