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Committee Date Time Place Paper Title / Authors Abstract Paper #
OPE, EMT, MW 2009-07-31
09:50		 Hokkaido Asahikawa Civic Culture Hall C-Ku band 120% relative bandwidth high efficiency high power amplifier using GaN HEMT
Eigo Kuwata, Koji Yamanaka, Tasuku Kirikoshi, Akira Inoue, Yoshihito Hirano (Mitsubishi electric corp) MW2009-68 OPE2009-68		 This paper reports on GaN HEMT (Gallium Nitride High Electron Mobility Transistor) HIC (Hybrid Integrated Circuit) high ... [more] MW2009-68 OPE2009-68
pp.205-209
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