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Committee Date Time Place Paper Title / Authors Abstract Paper #
EMCJ, MW, IEE-MAG 2009-10-22
15:00
Iwate Iwate Univ. S-band, Internally Matched Class-E GaN HEMT Amplifier
Yukio Takahashi, Takashi Higuchi, Kazutoshi Masuda (Toshiba Corp.) EMCJ2009-50 MW2009-99
A Class-E amplifier is designed at S-band with our inhouse developed GaN HEMTs. The Class-E amplifier generally describe... [more] EMCJ2009-50 MW2009-99
pp.37-40
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