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Committee Date Time Place Paper Title / Authors Abstract Paper #
MW, ED 2009-01-16
Tokyo Kikai-Shinko-Kaikan Bldg Effect of Temperature on Cryogenic DC and RF Characteristics of AlGaN/GaN MIS-HEMTs
Akira Endoh, Issei Watanabe, Yoshimi Yamashita (National Inst. of Info and Com Tech.), Takashi Mimura (National Inst. of Info and Com Tech/Fujitsu Lab Ltd.,), Toshiaki Matsui (National Inst. of Info and Com Tech.) ED2008-219 MW2008-184
We fabricated AlGaN/GaN MIS-HEMTs (metal-insulator-semiconductor high electron mobility transistors) with SiN/SiO2/SiN t... [more] ED2008-219 MW2008-184
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