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Committee
Date Time
Place
Paper Title / Authors
Abstract
Paper #
MW
,
ED
2007-01-19
13:50
Tokyo
Kikai-Shinko-Kaikan Bldg.
High-quality InAlN/GaN HEMT epi-wafer grown on Si (111) substrate by metalorganic chemical vapor deposition
Noriyuki Watanabe
,
Haruki Yokoyama
,
Masanobu Hiroki
,
Yasuhiro Oda
(
NTT
),
Takuma Yagi
(
NTT-AT
),
Takashi Kobayashi
(
NTT
)
We successfully fabricated high-quality InAlN/GaN high electron mobility transistors (HEMTs) structure on Si(111) substr...
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ED2006-233
MW2006-186
pp.183-187
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