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SDM, ICD, ITE-IST [detail] 2019-08-09
10:15		 Hokkaido Hokkaido Univ., Graduate School /Faculty of Information Science and Fabrication and electrical characteristics of amorphous-ZnSnO/Si bilayer tunnel FETs
Kimihiko Kato (Univ. of Tokyo/AIST), Hiroaki Matsui, Hitoshi Tabata, Mitsuru Takenaka, Shinichi Takagi (Univ. of Tokyo) SDM2019-46 ICD2019-11		 We have examined impact of an amorphous ZnSnO channel layer with high thickness uniformity on electrical characteristics... [more] SDM2019-46 ICD2019-11
pp.63-66
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