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Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM, ICD 2013-08-02
09:25		 Ishikawa Kanazawa University Reduced Cell Current Variability in Fully Depleted Silicon-on-Thin-BOX (SOTB) SRAM Cells at Supply Voltage of 0.4V
Tomoko Mizutani (Univ. of Tokyo), Yoshiki Yamamoto, Hideki Makiyama, Hirofumi Shinohara, Toshiaki Iwamatsu, Hidekazu Oda, Nobuyuki Sugii (LEAP), Toshiro Hiramoto (Univ. of Tokyo) SDM2013-75 ICD2013-57		 Cell current (ICELL) variability in 6T-SRAM composed of silicon-on-thin-BOX (SOTB) MOSFETs by 65nm technology is measure... [more] SDM2013-75 ICD2013-57
pp.47-52
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