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SDM, EID 2014-12-12
16:45		 Kyoto Kyoto University Temperature Dependence of Current Gain in 4H-SiC BJTs
Satoshi Asada, Takafumi Okuda, Tsunenobu Kimoto, Jun Suda (Kyoto Univ.) EID2014-35 SDM2014-130		 Temperature dependence of current gain from 140 to 460 K in a 4H-SiC bipolar junction transistor (SiC BJT) was investiga... [more] EID2014-35 SDM2014-130
pp.115-118
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