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Committee Date Time Place Paper Title / Authors Abstract Paper #
LQE, CPM, ED 2017-11-30
15:50		 Aichi Nagoya Inst. tech. Low-damage etching of nitride semiconductors utilizing photo-electrochemical reactions for electron devices
Keisuke Uemura, Satoru Matsumoto, Masachika Toguchi, Keisuke Ito, Taketomo Sato (Hokkaido Univ.) ED2017-54 CPM2017-97 LQE2017-67		 The photo-electrochemical oxidation and etching process was demonstrated in view of the damage-free etching for GaN and ... [more] ED2017-54 CPM2017-97 LQE2017-67
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