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Committee Date Time Place Paper Title / Authors Abstract Paper #
CPM, LQE, ED 2016-12-12
13:00		 Kyoto Kyoto University Current-voltage characteristics of Ni/Au Schottky diodes fabricated on InAlN/AlN/GaN heterostructures grown on GaN substrates
Junji Kotani, Atsushi Yamada, Tetsuro Ishiguro, Norikazu Nakamura (Fujitsu Lab.) ED2016-57 CPM2016-90 LQE2016-73		 This paper investigate the effects of threading dislocation density on the leakage characteristics of Ni/Au Schottky dio... [more] ED2016-57 CPM2016-90 LQE2016-73
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