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Committee Date Time Place Paper Title / Authors Abstract Paper #
ED 2016-04-22
11:30		 Yamagata   Room-temperature atomic layer deposition of zirconium oxide using plasma excited water vapor
Kentaro Tokoro, Kensaku kanomaka, Masanori Miura, Bashir Ahmmad, Shigeru Kubota, Fumihiko Hirose (Yamagata Univ.) ED2016-12		 In the field of LSI production, ZrO2 is expected as a high-k material for metal-oxide-field-effect transistors. ZrO2 has... [more] ED2016-12
pp.47-50
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