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Committee Date Time Place Paper Title / Authors Abstract Paper #
MW, ED 2015-01-16
11:30		 Tokyo Kikai-Shinko-Kaikan Bldg. Modeling of traps for GaN HEMT by transient response measurement and TCAD simulation
Yutaro Yamaguchi, Takuma Nanjo, Hidetoshi Koyama, Yoshitaka Kamo, Koji Yamanaka (Mitsubishi Electric corp.), Toshiyuki Oishi (Saga Univ.) ED2014-129 MW2014-193		 In this paper, we reported the result of analysis of traps at the buffer in GaN HEMT by both transient response measurem... [more] ED2014-129 MW2014-193
pp.71-76
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