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Committee Date Time Place Paper Title / Authors Abstract Paper #
MW, ED 2013-01-18
14:55		 Tokyo Kikai-Shinko-Kaikan Bldg. AlGaN/GaN MIS-Gate HEMTs with SiCN Gate Stacks
Kengo Kobayashi, Tomohiro Yoshida, Taiichi Otsuji, Ryuji Katayama, Takashi Matsuoka, Tetsuya Suemitsu (Tohoku Univ.) ED2012-126 MW2012-156		 This paper reports AlGaN/GaN metal-insulator-semiconductor (MIS)-gate high electron mobility transistors (HEMTs) with a ... [more] ED2012-126 MW2012-156
pp.75-78
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